IXFB50N80Q2

Description：MOSFET N-CH 800V 50A PLUS264
Series：HiPerFET™, Q2 Class
Mfr：IXYS
Package：Tube

SKU:966b2493dce6 Category: Single FETs, MOSFETs Brand: IXYS

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IXFB50N80Q2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 800V 50A PLUS264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFB50N80Q2

Description：MOSFET N-CH 800V 50A PLUS264
Series：HiPerFET™, Q2 Class
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：7200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1135W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PLUS264™
Package / Case：TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for IXFB50N80Q2

IXFB50N80Q2

Single FETs, MOSFETs Overview

The IXFB50N80Q2 is a Q-Class HiPerFET N-channel power MOSFET manufactured by IXYS. It features an 800 V drain-source voltage rating and a continuous drain current of 50 A. The device utilizes a PLUS-264 package for efficient thermal management. Key electrical parameters include a maximum on-state resistance of 0.19 Ohms, a gate charge of 75 nC, and a typical turn-off delay time of 60 ns. It supports a maximum power dissipation of 300 W and operates within a temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Incorporates Q-Class technology to achieve reduced on-state resistance and input capacitance compared to previous generations.
Features fast intrinsic body diode characteristics suitable for hard switching and resonant mode applications.
Designed with high ruggedness and enhanced current handling capability to minimize the need for parallel component configurations.

Single FETs, MOSFETs Applications

Hard switching power supply circuits
Resonant mode power conversion systems
High-efficiency industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer datasheet to confirm the exact pinout configuration and thermal resistance values for the PLUS-264 package. Ensure that the sourcing channel provides original components with traceable documentation to guarantee compliance with the specified electrical ratings and quality standards.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage blocking capabilities combined with low conduction losses. The Q-Class optimization makes it suitable for applications prioritizing efficiency in high-frequency switching environments. Consider the thermal performance requirements of the PLUS-264 package during the heat sink design phase.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET family, which focuses on high-performance power MOSFETs. The Q-Class designation indicates a specific generation optimized for improved electrical metrics such as lower gate charge and reduced thermal resistance, targeting advanced power electronics designs.