IXFH14N100

Description：MOSFET N-CH 1000V 14A TO247AD
Series：HiPerFET™
Mfr：IXYS
Package：Tube

SKU:f1db9fd69440 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFH14N100 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 1000V 14A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFH14N100

Description：MOSFET N-CH 1000V 14A TO247AD
Series：HiPerFET™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：750mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：220 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD (IXFH)
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFH14N100

IXFH14N100

Single FETs, MOSFETs Overview

The IXYS IXFH14N100 is an obsolete N-Channel enhancement mode Power MOSFET belonging to the HiPerFET HDMOSTM family. It features a TO-247 AD package with a drain-connected tab for mounting. Key electrical parameters include a 1000 V drain-source breakdown voltage (VDSS), a continuous drain current (ID25) of 14 A at 25°C case temperature, and a maximum on-resistance (RDS(on)) of 0.75 Ω at VGS = 10 V. The device supports a transient gate-source voltage of ±30 V, a power dissipation of 360 W, and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

HDMOSTM process technology providing low RDS(on) and rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated capability
Fast intrinsic rectifier with low reverse recovery time (trr)
Low package inductance design for easy driving and protection

Single FETs, MOSFETs Applications

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control

Single FETs, MOSFETs Procurement Notes

Verify component obsolescence status before procurement planning. Confirm datasheet revision history and parameter tolerances against original specifications. Ensure thermal management designs account for the specified RthJC values. Validate that sourcing channels provide authentic components matching the obsolete part number requirements.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust UIS performance and fast switching characteristics. Consider the TO-247 AD package for through-hole mounting or clip/spring attachment. Evaluate thermal resistance parameters for heat sink sizing. Compare alternative HiPerFET variants if specific current ratings or package styles differ from project constraints.

Single FETs, MOSFETs Part Context

The IXFH14N100 is part of the IXYS HiPerFET family, utilizing HDMOSTM technology. It is designed as a single N-Channel enhancement mode MOSFET. The product line includes related models such as the IXFT14N100 and IXFX15N100, sharing similar electrical characteristics but differing in package configurations like TO-268 or PLUS 247.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the component is marked obsolete, verify compatibility with equivalent HiPerFET series devices or consult manufacturer recommendations for direct replacements.