IXFH58N20

Single FETs, MOSFETs Overview

The IXFH58N20 is a single N-channel enhancement mode power MOSFET manufactured by IXYS. It features a silicon technology and utilizes the HyperFET trademark series architecture. The device is housed in a TO-247 package with three terminals, designed for through-hole mounting. Key electrical parameters include a drain-source breakdown voltage of 200 V and a continuous drain current rating of 58 A. The maximum on-resistance is specified at 0.04 Ω. The component operates within a temperature range from -55 °C to +150 °C, with a power dissipation capacity of 360 W.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration with built-in diode
• Enhancement mode operation
• Avalanche rated capability
• Drain-connected case

Single FETs, MOSFETs Applications

• Power switching circuits
• DC-DC converters
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version before integration, as manufacturing specifications may evolve. Confirm that the TO-247 package dimensions match the target PCB footprint. Ensure thermal management solutions account for the 360 W power dissipation rating under actual operating conditions. Check RoHS compliance status if required by the final assembly standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V rating and 58 A continuous current are required in a standard TO-247 form factor. The 0.04 Ω on-resistance offers a balance between conduction losses and cost for medium-power applications. Consider the avalanche rating if inductive load switching is present. Compare against other IXYS HyperFET devices for alternative current or voltage ratings.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HyperFET family of power MOSFETs. These devices are engineered for high-efficiency power conversion. The TO-247 package provides robust mechanical stability and thermal performance suitable for industrial environments. The product line emphasizes low on-resistance and fast switching characteristics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IXFK80N20 for higher current handling in a TO-264 package, or the IXFH42N20 for lower current requirements in a TO-247AD package. Verify pinout compatibility and thermal resistance values when cross-referencing.