IXFN30N110P

Single FETs, MOSFETs Overview

The IXFN30N110P is an N-channel enhancement-mode MOSFET from the IXYS HiperFET series. It features a drain-source voltage (Vds) of 1100 V and a continuous drain current (Id) of 25 A. The device has a maximum on-resistance (Rds(on)) of 480 mΩ at Vgs = 10 V. Typical gate charge (Qg) is 160 nC at Vgs = 10 V. Power dissipation (Pd) is rated at 695 W. Operating temperature range spans from -55°C to +150°C. Package type is SOT-227B with panel mount installation.

Single FETs, MOSFETs Feature Summary

• High-voltage capability for robust power switching applications
• Enhanced thermal performance via direct panel mounting design
• Low on-state resistance for efficient conduction

Single FETs, MOSFETs Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify exact datasheet revision and manufacturer lot codes upon order confirmation. Confirm package dimensions and mounting hole specifications match your mechanical design requirements. Ensure thermal interface material compatibility with the SOT-227B base plate for optimal heat dissipation. Check for any specific handling or storage conditions required by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when high blocking voltage and moderate current are required in a single-chip solution. Consider the thermal resistance and mounting constraints associated with the SOT-227B package. Evaluate gate drive requirements against the specified gate charge and threshold voltage characteristics for your specific switching frequency and efficiency targets.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiperFET family, known for high-voltage silicon MOSFETs. It is designed for general-purpose power switching where reliability and high voltage tolerance are critical. The SOT-227B package allows for direct heatsink attachment, simplifying thermal management in high-power density designs compared to standard through-hole packages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 1100V N-channel MOSFETs in similar packages, such as those from Infineon or ON Semiconductor. Verify pinout compatibility and electrical parameters like Rds(on) and Qg before substitution. Ensure thermal characteristics and mounting hole patterns align with existing PCB or chassis designs.