IXFX27N80Q

Single FETs, MOSFETs Overview

The IXFX27N80Q is an N-Channel Enhancement Mode Power MOSFET from the HiPerFET Q-Class series. It features a maximum drain-source voltage (VDSS) of 800 V and a continuous drain current (ID25) of 27 A at 25°C case temperature. The device has a typical on-state resistance (RDS(on)) of 320 mΩ at VGS = 10 V. Key switching parameters include a total gate charge (Qg) of 170 nC, a turn-on delay time (td(on)) of 20 ns, and a reverse recovery time (trr) of 250 ns for the source-drain diode. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Rated for unclamped inductive load switching (UIS)
• Advanced low gate charge process for faster switching
• High dV/dt capability with low reverse recovery time
• Molding epoxies meet UL 94 V-0 flammability classification

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required upon ordering. The datasheet distinguishes between the IXFK27N80Q (TO-264 AA) and IXFX27N80Q (PLUS 247). Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure thermal management solutions align with the specified RthJC and RthCK values for reliable operation under load.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust UIS performance. The 800 V rating suits industrial and automotive power systems. Consider the 320 mΩ RDS(on) for conduction loss calculations. The PLUS 247 or TO-264 packages facilitate clip or spring mounting, which may influence mechanical design decisions compared to standard leaded packages.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET Q-Class family, now distributed by Littelfuse. These devices utilize advanced silicon processes to optimize the trade-off between on-resistance and gate charge. The product line targets high-efficiency power conversion systems where switching speed and thermal durability are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

The IXFK27N80Q serves as a pin-compatible alternative utilizing the TO-264 AA package outline. Verify mechanical dimensions and terminal configurations before substitution. Electrical characteristics remain consistent across the IXFX and IXFK variants.