IXTA24N65X2

$5.47

Description：MOSFET N-CH 650V 24A TO263AA
Series：Ultra X2
Mfr：IXYS
Package：Tube

SKU:b4457db42c35 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXTA24N65X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 650V 24A TO263AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTA24N65X2

Description：MOSFET N-CH 650V 24A TO263AA
Series：Ultra X2
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2060 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：390W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AA
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IXTA24N65X2

IXTA24N65X2

Single FETs, MOSFETs Overview

The IXTA24N65X2 is a surface-mount N-channel Power MOSFET from the IXYS HiPerFET X2-Class series. It features a 650V drain-source voltage and a continuous drain current of 24A at case temperature. The device utilizes Ultra Junction technology to achieve low on-resistance, specified as 145 mΩ at 10V gate drive. Packaged in a TO-263AA (D²PAK) housing, it supports a maximum power dissipation of 390W at case temperature and operates within a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

Utilizes IXYS Ultra Junction technology for enhanced switching performance and reduced conduction losses compared to standard planar MOSFETs.
Designed with an X2-Class architecture optimized for high-efficiency power conversion applications requiring robust thermal management.
Features a single-channel enhancement mode configuration suitable for high-frequency switching environments.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
Power factor correction (PFC) circuits
Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing, as manufacturing sites or packaging formats may vary. Confirm RoHS compliance status directly with the supplier documentation. Ensure thermal interface materials are compatible with the TO-263AA package requirements for optimal heat dissipation during operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance between high voltage blocking capability and moderate current handling in a surface-mount form factor. Compare the 145 mΩ on-resistance against system efficiency targets. Ensure the gate drive voltage aligns with the 10V specification for optimal Rds(on) performance and switching characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET family, specifically the X2-Class series which integrates Ultra Junction technology. It serves as a surface-mount alternative to through-hole variants like the IXTH24N65X2, offering similar electrical performance in a compact TO-263AA package for space-constrained PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers for IXTA24N65X2 are not available in the provided source material. Cross-referencing requires matching Vds, Id, Rds(on), and package type specifications from official manufacturer databases.