IXTV26N50P

Single FETs, MOSFETs Overview

The IXTV26N50P is an N-Channel Power MOSFET from the PolarHV series by IXYS. It features a drain-source voltage of 500 V and a continuous drain current of 26 A at 25°C. The device has a maximum on-resistance of 230 mΩ and supports power dissipation up to 400 W. It operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Avalanche rated for robust operation
• Fast intrinsic body diode with low reverse recovery time
• Low gate charge and drain-to-tab capacitance

Single FETs, MOSFETs Applications

• High voltage switching applications
• Power supply designs
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version as IXYS devices may undergo specification updates. Confirm package type compatibility with your PCB layout, as variations exist between through-hole and surface mount options within similar part numbers. Check for recent product discontinuation notices affecting this prefix.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and moderate current handling are required. Ensure thermal management strategies account for the specified power dissipation limits. Compare gate charge requirements against driver capabilities to optimize switching losses in high-frequency applications.

Single FETs, MOSFETs Part Context

This part belongs to the PolarHV series, designed for high-voltage power applications. It utilizes advanced MOS technology to achieve low on-resistance and fast switching speeds. The series is known for reliability in demanding industrial environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes like IXTQ26N50P or IXTF26N50P, ensuring pinout and electrical parameters match. Verify package dimensions before substitution.