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JAN1N5298UR-1 is listed in the Current Regulation - Diodes, Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE CUR REG 100V 1.21MA 500MW. Review the specifications below when checking this part for your BOM.
The JAN1N5298UR-1 is a hermetically sealed current regulator diode manufactured by Microchip Technology. It utilizes silicon technology and operates within a temperature range of -65°C to +175°C. The device features a maximum limiting voltage of 1.4 V and a specified current of 1.1 mA. It is housed in the DO-213AB package, also identified as MELF-2 or LL41, with a glass encapsulation. The component is metallurgically bonded and isolated, designed for high-reliability applications requiring stable current regulation.
Verify the specific suffix UR-1 indicates the surface-mount MELF variant distinct from through-hole versions. Confirm military qualification status and lot traceability requirements prior to ordering. Ensure handling procedures account for the hermetic glass package integrity during assembly.
Select this component when a hermetically sealed, surface-mount current regulator is required for extreme temperature environments. Compare the 1.1 mA regulation point against circuit needs. Verify that the DO-213AB footprint matches the design layout constraints.
This part belongs to the JAN series of radiation-hardened and military-grade semiconductors produced by Microchip. It is a surface-mount equivalent to axial leaded current regulator diodes, offering similar electrical performance in a compact, hermetic glass package suitable for space-constrained military designs.
Direct substitutes include JANTX1N5298UR-1 for enhanced testing levels. For through-hole applications, consider the JAN1N5298-1 variant. Verify pinout compatibility and thermal characteristics before substituting with non-hermetic commercial grade parts.
Explore related parts through Discrete Semiconductor Products, all product categories, ChipApex homepage.

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