Diode Arrays JAN1N5711UBD product image

JAN1N5711UBD

$62.49
  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-

SKU:7a097cde62c5 Category: Brand:

  
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JAN1N5711UBD is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 50V 33MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JAN1N5711UBD

  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):33mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 nA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JAN1N5711UBD

JAN1N5711UBD

Diode Arrays Overview

The JAN1N5711UBD is a Schottky barrier diode manufactured by Microchip Technology, designed for high-reliability applications. It features a ceramic surface-mount package (UB) and complies with MIL-PRF-19500/444 standards. The device operates with a maximum repetitive reverse voltage of 50 V and an average forward current of 33 mA DC. Key electrical parameters include a forward voltage of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. Junction capacitance is specified as 2 pF at 0 V and 1 MHz. The component supports a junction temperature range from -65°C to +150°C.

Diode Arrays Feature Summary

  • Hermetically sealed ceramic construction ensures durability in harsh environments.
  • Military-grade qualification meets MIL-PRF-19500/444 reliability standards.
  • Low forward voltage drop enhances efficiency in signal processing circuits.

Diode Arrays Applications

  • High-reliability aerospace systems
  • Military communication equipment
  • UHF/VHF detection circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'UBD' against official Microchip documentation to confirm the exact package variant and military qualification level. Ensure compliance with export control regulations associated with military-grade components. Confirm RoHS status, as military variants may differ from commercial equivalents. Validate supplier authorization for sourcing qualified parts.

Diode Arrays Selection Notes

Select this component when hermetic sealing and strict military reliability standards are required. The UB package offers a surface-mount alternative to axial leads while maintaining ruggedness. Consider the 50 V rating and 33 mA current limit for circuit design constraints. Verify thermal management requirements given the wide operating temperature range.

Diode Arrays Part Context

This part belongs to the 1N5711 series of Schottky barrier diodes. It serves as the surface-mount equivalent to the traditional DO-35 axial-leaded 1N5711. The series is characterized by ultrafast switching speeds and low turn-on voltages, making it suitable for RF detection and pulse applications requiring broad dynamic range.

Diode Arrays Replacement Considerations

Publicly confirmed substitutes include other qualified levels within the same family, such as JANTX1N5711UBD or JANTXV1N5711UBD, provided they meet the specific environmental and performance requirements of the application.

JAN1N5711UBDJAN1N5711UBD
$62.49
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