Single Bipolar Transistors JAN2N5014 product image

JAN2N5014

  • Description:TRANS NPN 900V 0.2A TO-5AA
  • Series:-

SKU:e458987e018a Category: Brand:

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JAN2N5014 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is TRANS NPN 900V 0.2A TO-5AA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N5014

  • Description:TRANS NPN 900V 0.2A TO-5AA
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):900 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5AA
  • Grade:Military
  • Qualification:MIL-PRF-19500/727

Single Bipolar Transistors datasheet and documents for JAN2N5014

JAN2N5014

Single Bipolar Transistors Overview

The JAN2N5014 is a silicon NPN power bipolar junction transistor (BJT) designed for high-reliability applications. It is qualified per MIL-PRF-19500/38 and features a hermetically sealed metal case construction. The device operates with a collector-emitter voltage of 60V and supports a continuous collector current of 1A. It provides a minimum DC current gain of 20 at specified operating conditions and is rated for a maximum power dissipation of 1W. The component utilizes a TO-5 package configuration suitable for through-hole mounting in demanding environments.

Single Bipolar Transistors Feature Summary

  • Hermetically sealed metal case construction for environmental protection
  • Qualified to MIL-PRF-19500/38 military reliability standards
  • Silicon NPN epitaxial planar technology
  • Designed for high-reliability aerospace and defense circuits

Single Bipolar Transistors Applications

  • Military radar systems
  • Avionics control units
  • Spacecraft power regulation
  • High-reliability switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific screening level suffix required for your application, as JAN denotes standard military qualification. Confirm that the TO-5 package dimensions match your board layout constraints. Ensure procurement channels provide traceability documentation compliant with MIL-PRF-19500/38 requirements. Check for any recent Product Change Notifications (PCNs) from Microchip regarding manufacturing site transfers or material updates.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed NPN power transistor is required for radiation-tolerant or harsh environment designs. Compare against commercial equivalents if cost is a primary driver, noting the loss of military qualification. Consider thermal management solutions given the 1W power rating in a small metal package. Verify that the 60V breakdown voltage meets the circuit's peak transient requirements.

Single Bipolar Transistors Part Context

This part belongs to the JAN series of discrete semiconductors manufactured by Microsemi (now Microchip). These components are specifically screened and tested to meet strict military performance criteria. The JAN2N5014 serves as a ruggedized alternative to commercial BJT variants, ensuring consistent performance over extended temperature ranges and long operational lifespans in critical infrastructure.

Single Bipolar Transistors Replacement Considerations

Direct replacements must maintain the same MIL-PRF-19500/38 qualification and TO-5 package form factor. Cross-reference with other JAN-series NPN transistors having similar Vceo and Ic ratings. Verify pinout compatibility before substitution. Commercial 2N5014 equivalents lack hermetic sealing and military screening.

JAN2N5014JAN2N5014

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