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JANS1N5303-1/TR is listed in the Current Regulation - Diodes, Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE CUR REG 100V 1.76MA 500MW. Review the specifications below when checking this part for your BOM.
The JANS1N5303-1/TR is a current regulator diode manufactured by Microchip Technology, designed for high-reliability applications. It operates with a maximum voltage of 100V and provides a regulated current of 1.76mA. The device features a power dissipation rating of 475mW and is housed in a DO-213AB-2 (SOD-80) surface-mount package. It complies with MIL-PRF-19500/463 specifications, ensuring suitability for aerospace and defense environments. The component supports an operating temperature range from -55°C to +175°C.
Verify the specific suffix configuration against the manufacturer's official datasheet to ensure compliance with required military specifications. Confirm that the ordering part number matches the exact radiation hardness and packaging requirements for the intended deployment environment before finalizing procurement.
Select this component when radiation tolerance and strict military reliability standards are mandatory. Ensure the circuit design accommodates the 1.76mA constant current characteristic and the 100V breakdown voltage limit. Verify thermal management capabilities within the specified -55°C to +175°C junction temperature range for the target application.
This part belongs to the JAN series of radiation-hardened semiconductors produced by Microchip Technology. It serves as a specialized variant of the standard 1N5303 current regulator, enhanced for harsh environments. The TR suffix indicates tape-and-reel packaging for automated assembly processes.
Direct replacements must meet identical MIL-PRF-19500/463 qualifications. Verify pinout compatibility with the DO-213AB-2 package. Evaluate alternative radiation-hardened current regulators from qualified vendors if supply constraints exist.
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