JANS1N5711UBD

Diode Arrays Overview

The JANS1N5711UBD is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a ceramic surface-mount UB package and is qualified to the JANS level per MIL-PRF-19500/444 for high-reliability applications. The device has a maximum repetitive reverse voltage of 50 V and an average forward current rating of 33 mA DC. Key electrical parameters include a maximum forward voltage of 1 V at 15 mA, a maximum reverse leakage current of 200 nA at 50 V, and a typical capacitance of 2 pF at 0 V and 1 MHz. It operates within a junction temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

• Ceramic surface-mount construction for enhanced environmental resistance
• JANS qualification ensuring radiation hardness for space environments
• Low forward voltage drop characteristic for efficient signal processing
• Ultrafast switching capability suitable for high-frequency detection

Diode Arrays Applications

• High-reliability aerospace systems requiring radiation tolerance
• UHF/VHF detection circuits in harsh environments
• Pulse application circuits with broad dynamic range requirements
• Spacecraft power management and signal conditioning

Diode Arrays Procurement Notes

Verify that the specific part number suffix matches the required military qualification level. Confirm package type and lead configuration against design specifications. Ensure compliance with project-specific radiation hardness assurance standards. Check for recent product change notifications affecting material composition or assembly sites. Validate supplier authorization for handling sensitive military-grade components.

Diode Arrays Selection Notes

Select this component when radiation hardness is mandatory for space applications. Choose the ceramic UB package for superior hermetic sealing compared to plastic alternatives. Consider the 33 mA current limit for low-power signal paths. Evaluate thermal management requirements given the wide operating temperature range. Compare against commercial equivalents if radiation tolerance is not required.

Diode Arrays Part Context

This device belongs to the 1N5711 family of small-signal Schottky diodes. It serves as the radiation-hardened surface-mount equivalent of axial-leaded variants. The JANS designation indicates it meets strict screening and testing protocols for space flight. It complements other military-grade diodes in Microchip's portfolio for critical electronic systems.

Diode Arrays Replacement Considerations

Direct substitutes include JAN1N5711UBD and JANTX1N5711UBD, though these lack the full JANS radiation hardness qualification. Verify pinout compatibility and thermal characteristics before substitution. Commercial replacements do not meet military reliability standards.