Single Bipolar Transistors JANSF2N3700UB/TR product image

JANSF2N3700UB/TR

$42.15
  • Description:TRANS NPN 80V 1A UB
  • Series:-

SKU:501b0e3f9105 Category: Brand:

  
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JANSF2N3700UB/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 1A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSF2N3700UB/TR

  • Description:TRANS NPN 80V 1A UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 500mA, 10V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-LCC
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/391

Single Bipolar Transistors datasheet and documents for JANSF2N3700UB/TR

JANSF2N3700UB/TR

Single Bipolar Transistors Overview

The JANSF2N3700UB/TR is a silicon NPN small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an SMD/SMT mounting style in an SMD-4 package configuration. The device supports a maximum DC collector current of 1 A and a collector-emitter voltage (VCEO) of 80 V. Additional voltage ratings include a collector-base voltage (VCBO) of 140 V and an emitter-base voltage (VEBO) of 7 V. Power dissipation is rated at 500 mW, with an operating temperature range spanning from -65 C to +200 C.

Single Bipolar Transistors Feature Summary

  • Designed for high-reliability applications requiring robust performance under extreme thermal conditions.
  • Utilizes silicon technology for stable switching and amplification functions.
  • Configured as a single NPN transistor suitable for surface-mount integration.

Single Bipolar Transistors Applications

  • Military aerospace electronic systems
  • High-temperature signal processing circuits
  • Ruggedized amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designations against official Microchip documentation to ensure correct packaging and reliability grade alignment. Confirm that the SMD-4 footprint matches the target PCB layout requirements. Validate compliance with relevant military or industrial standards required for the intended deployment environment before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a surface-mount NPN BJT is required for high-temperature environments up to 200 C. Ensure the circuit design accommodates the 500 mW power dissipation limit within the SMD-4 package constraints. Compare electrical characteristics against alternative packages if through-hole mounting is preferred for mechanical stability.

Single Bipolar Transistors Part Context

This part belongs to the 2N3700 family of small-signal transistors produced by Microchip Technology. It represents a specialized variant optimized for surface-mount technology while maintaining the electrical specifications associated with the broader 2N3700 series. The product line targets sectors demanding high reliability and extended temperature operation capabilities.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent parts such as JAN2N3700UB/TR or JANSU2N3700UB. Verify pinout compatibility and thermal management requirements when transitioning between different package styles within the same functional family.

JANSF2N3700UB/TRJANSF2N3700UB/TR
$42.15
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