JANSM2N5152U3

Single Bipolar Transistors Overview

The JANSM2N5152U3 is a radiation-hardened NPN power bipolar junction transistor manufactured by Microchip Technology. It features an 80V collector-emitter voltage rating, a 2A continuous collector current capacity, and a 1W power dissipation limit. The device utilizes a low-profile ceramic surface-mount package designed for high reliability in harsh environments. It is qualified to MIL-PRF-19500/545 standards with a total ionizing dose radiation hardness of 3K rads (Si).

Single Bipolar Transistors Feature Summary

• Radiation hardened design providing immunity to total ionizing dose effects up to 3K rads (Si)
• Low profile ceramic construction optimized for surface mount technology applications
• Qualified per MIL-PRF-19500/545 specifications for military and aerospace reliability

Single Bipolar Transistors Applications

• Satellite communication systems requiring radiation tolerance
• Military avionics and flight control electronics
• Spacecraft power management and distribution circuits

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level and qualification status against project requirements before procurement. Confirm that the low-profile ceramic SMT package aligns with the printed circuit board layout constraints. Ensure compliance with relevant military specifications and environmental testing standards required for the intended operational environment.

Single Bipolar Transistors Selection Notes

Select this component when radiation hardness is critical for system longevity in space or high-altitude operations. Compare performance metrics against other JANS series variants to determine the optimal balance between radiation tolerance levels and package form factor. Evaluate thermal management capabilities within the low-profile ceramic housing to ensure adequate heat dissipation under maximum load conditions.

Single Bipolar Transistors Part Context

This part belongs to the JANSM series of radiation-hardened silicon planar power transistors produced by Microchip Technology. These devices are engineered for demanding applications where standard commercial components would fail due to radiation exposure. The U3 suffix indicates the specific low-profile ceramic surface-mount package configuration used for this NPN variant.

Single Bipolar Transistors Replacement Considerations

JANSD2N5152U3 offers higher radiation hardness at 10K rads (Si) with identical electrical characteristics and packaging.