Single Bipolar Transistors JANSM2N5153U3 product image

JANSM2N5153U3

$195.48
  • Description:TRANS PNP 80V 2A U3
  • Series:-

SKU:e875239d2160 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

JANSM2N5153U3 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 80V 2A U3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSM2N5153U3

  • Description:TRANS PNP 80V 2A U3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2.5A, 5V
  • Power - Max:1.16 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:U3
  • Grade:Military
  • Qualification:MIL-PRF-19500/545

Single Bipolar Transistors datasheet and documents for JANSM2N5153U3

JANSM2N5153U3

Single Bipolar Transistors Overview

The JANSM2N5153U3 is a radiation-hardened PNP power silicon transistor manufactured by Microchip Technology. It features a low-profile ceramic surface-mount design suitable for harsh environments. Key electrical ratings include a maximum collector-emitter voltage of 80 V and a continuous collector current of 2 A. The device dissipates 1 W of power and operates within a temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

  • Radiation hardened to withstand high total ionizing dose levels
  • Low profile ceramic surface mount package construction
  • High thermal stability with extended operating temperature range

Single Bipolar Transistors Applications

  • Military aerospace systems requiring radiation tolerance
  • Satellite communication power management circuits
  • High reliability industrial control applications

Single Bipolar Transistors Procurement Notes

Verify the specific radiation hardness level required for the application against the datasheet specifications. Confirm that the low-profile ceramic SMT package dimensions match the PCB footprint exactly. Ensure thermal management strategies account for the 1 W power dissipation limit in the final assembly environment.

Single Bipolar Transistors Selection Notes

Select this component when radiation hardness is mandatory for PNP switching or amplification tasks. Compare the 80 V rating against circuit peak voltages to ensure adequate margin. Consider the TO-2977AA package constraints for board space and thermal conductivity requirements compared to standard through-hole alternatives.

Single Bipolar Transistors Part Context

This part belongs to the 2N5153 family of radiation-hardened bipolar junction transistors. It shares core electrical characteristics with other variants in the series but utilizes a specific surface-mount ceramic package optimized for automated assembly and mechanical robustness in vibration-prone environments.

Single Bipolar Transistors Replacement Considerations

Direct replacements include the JANSL2N5153U3 for lower radiation tolerance requirements or the standard 2N5153U3 if radiation hardening is not needed. Verify pinout compatibility and package dimensions before substitution.

JANSM2N5153U3JANSM2N5153U3
$195.48
Buy Now

Recent News