Single Diodes JANTX1N5809US product image

JANTX1N5809US

$6.91
  • Description:DIODE STANDARD 100V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:96aa3774490f Category: Brand:

  
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JANTX1N5809US is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STANDARD 100V 3A B SQMELF. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for JANTX1N5809US

  • Description:DIODE STANDARD 100V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):3A
  • Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 100 V
  • Capacitance @ Vr, F:60pF @ 10V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, B
  • Supplier Device Package:B, SQ-MELF
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Grade:Military
  • Qualification:MIL-PRF-19500/477

Single Diodes datasheet and documents for JANTX1N5809US

JANTX1N5809US

Single Diodes Overview

The JANTX1N5809US is a silicon ultrafast recovery power rectifier manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current rating of 3 A. The device utilizes a surface-mount SQ-MELF (B) package and operates within a junction temperature range of -65°C to +175°C. Key electrical characteristics include a typical reverse recovery time of 30 ns, a maximum forward voltage of 875 mV at 4 A, and a reverse leakage current of 5 µA at 100 V.

Single Diodes Feature Summary

  • Military-grade reliability qualification compliant with MIL-PRF-19500/477 standards for high-reliability applications.
  • Hermetically sealed void-less glass construction designed to prevent failure in critical environments.
  • Ultrafast recovery performance optimized for high-frequency switching operations.

Single Diodes Applications

  • High-reliability aerospace and defense power conversion systems
  • Critical military electronic equipment requiring fault-tolerant components
  • High-frequency ultrafast recovery rectification circuits

Single Diodes Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact qualification level and testing requirements. Ensure compatibility with MIL-PRF-19500/477 specifications for intended deployment. Confirm package integrity and hermetic seal status prior to integration into sensitive assemblies.

Single Diodes Selection Notes

Select this component when military-grade reliability and ultrafast switching speeds are required in a surface-mount form factor. Compare against standard commercial variants if environmental sealing and extended temperature operation are necessary. Evaluate thermal management capabilities given the 175°C maximum junction temperature limit.

Single Diodes Part Context

This part belongs to the 1N58xx series of ultrafast recovery rectifiers produced by Microchip Technology. The series includes various voltage ratings and current capacities, all sharing similar ultrafast recovery characteristics and hermetic packaging options for demanding applications.

Single Diodes Replacement Considerations

Consult official substitution lists for equivalent parts such as JAN1N5809US or JANS1N5809US. Verify that alternative candidates meet identical MIL-PRF-19500/477 qualification levels and maintain compatible electrical parameters.

JANTX1N5809USJANTX1N5809US
$6.91
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