Diode Arrays JANTXV1N4148UBCA/TR product image

JANTXV1N4148UBCA/TR

$28.08
  • Description:DIODE ARRAY GP 75V 200MA UB
  • Series:-

SKU:fd3c626202b8 Category: Brand:

  
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JANTXV1N4148UBCA/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY GP 75V 200MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANTXV1N4148UBCA/TR

  • Description:DIODE ARRAY GP 75V 200MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):75 V
  • Current - Average Rectified (Io) (per Diode):200mA
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):20 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 75 V
  • Operating Temperature - Junction:-65°C ~ 200°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/116

Diode Arrays datasheet and documents for JANTXV1N4148UBCA/TR

JANTXV1N4148UBCA/TR

Diode Arrays Overview

The JANTXV1N4148UBCA/TR is a high-reliability switching diode designed for radiation-hardened applications. It features a hermetically sealed DO-213AA (SMB) package, ensuring durability in harsh environments. The device operates with a maximum repetitive peak reverse voltage of 100 V and a forward current of 1.5 A. Key electrical characteristics include a fast recovery time of 4 ns and a low leakage current of 25 nA at rated voltage. This component is engineered to withstand total ionizing dose levels up to 100 krad(Si), making it suitable for aerospace and military systems requiring robust semiconductor performance.

Diode Arrays Feature Summary

  • Hermetically sealed construction for environmental protection
  • Radiation hardening for space and military use
  • Fast switching capability for high-speed circuits
  • High reliability under extreme thermal conditions

Diode Arrays Applications

  • Satellite communication systems
  • Military avionics control units
  • Spacecraft power management modules
  • Rad-hard data acquisition systems

Diode Arrays Procurement Notes

Verify the specific suffix 'CA' confirms the lead-free and halogen-free status if required by project specifications. Confirm that the 'TR' designation indicates tape and reel packaging for automated assembly. Ensure the procurement documentation explicitly states compliance with MIL-PRF-19500 standards for qualified microelectronic devices. Request batch traceability certificates to validate radiation hardness testing results for critical mission assurance.

Diode Arrays Selection Notes

Select this component when radiation tolerance and hermetic sealing are mandatory requirements. Compare total ionizing dose specifications against mission duration and orbital altitude constraints. Evaluate the SMB package dimensions against available board space in compact avionics enclosures. Verify that the 100 V reverse voltage rating exceeds the maximum circuit transient voltages to prevent breakdown during operation.

Diode Arrays Part Context

This part belongs to Microchip's family of radiation-hardened silicon rectifiers. It serves as a specialized variant of standard switching diodes, enhanced for nuclear and vacuum environments. The product line supports defense contractors and aerospace OEMs needing certified components for long-duration missions where standard commercial parts would fail due to single-event effects or latch-up.

Diode Arrays Replacement Considerations

Direct replacements must match the DO-213AA package and radiation qualification level. Check equivalent parts from other foundries for identical 100 V ratings and 4 ns recovery times. Ensure substitute components also carry relevant military quality certifications if the original design mandates them.

JANTXV1N4148UBCA/TRJANTXV1N4148UBCA/TR
$28.08
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