JANTXV1N6642UBCA/TR

Diode Arrays Overview

The JANTXV1N6642UBCA/TR is a radiation-hardened diode array manufactured by Microchip Technology. It features a single pair with a common anode configuration, designed for surface mount installation in a 3-SMD, no-lead package. The device supports a peak repetitive reverse voltage of 75 V and a maximum average forward current of 300 mA. Key electrical parameters include a maximum reverse current of 500 nA, a forward voltage of 1.2 V, and a typical recovery time of 5 ns. It operates within a temperature range of -65°C to +175°C.

Diode Arrays Feature Summary

• Radiation-hardened construction suitable for harsh environments
• Common anode dual diode configuration in compact SMD package
• High-temperature operation capability up to 175°C

Diode Arrays Applications

• Military aerospace systems requiring radiation tolerance
• Satellite communication circuits
• High-reliability computer diode applications

Diode Arrays Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging when ordering. Confirm that the JANTXV designation ensures full compliance with military radiation hardness requirements. Ensure the 3-SMD footprint matches the target PCB design constraints before finalizing procurement.

Diode Arrays Selection Notes

Select this component for designs requiring radiation tolerance and high-temperature stability. Compare against standard commercial variants if environmental hardening is not required. Verify that the common anode topology aligns with the circuit schematic requirements for the specific application.

Diode Arrays Part Context

This part belongs to the JANTXV series of radiation-hardened semiconductors from Microchip. It serves as a specialized variant of the general-purpose switching diode family, adapted for surface mount technology while maintaining the robust performance characteristics necessary for defense and space-grade electronics.

Diode Arrays Replacement Considerations

JANTX1N6642UBCA/TR