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JANTXV1N6642UBD/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY GP 75V 300MA UB. Review the specifications below when checking this part for your BOM.
The JANTXV1N6642UBD/TR is a silicon switching diode manufactured by Microchip Technology, designed for high-reliability applications. It features a peak reverse voltage of 75 V and an average forward current rating of 300 mA. The device supports a maximum surge current of 2.5 A and exhibits a fast recovery time of 5 ns. Electrical characteristics include a forward voltage of 1.2 V and a reverse leakage current of 500 nA. It operates within a temperature range of -65°C to +175°C and utilizes a three-pin ceramic surface-mount package.
Verify the specific suffix configuration against official Microchip documentation to ensure correct pinout and electrical ratings. Confirm that the ceramic package variant matches the design requirements for thermal management and mechanical stability. Cross-reference the manufacturing date code and quality certification levels to ensure compliance with project specifications before finalizing procurement orders.
Select this component when a small-signal switching diode with extended temperature tolerance is required. The ceramic SMT package offers superior environmental resistance compared to standard plastic variants. Ensure the circuit design accommodates the 75 V reverse voltage limit and 300 mA forward current constraints while leveraging the fast 5 ns switching speed for optimal signal integrity.
This part belongs to the JANTXV series of radiation-hardened or high-reliability silicon diodes produced by Microchip Technology. It is functionally related to the standard 1N6642 specification but meets stricter military-grade quality standards. The UBD suffix indicates a specific surface-mount ceramic package configuration distinct from through-hole or standard plastic SMD versions.
JANTXV1N6642U/TR
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