Single Bipolar Transistors JANTXV2N2880 product image

JANTXV2N2880

$159.05
  • Description:TRANS NPN 80V 5A TO-59
  • Series:-

SKU:8ae5e8b381e0 Category: Brand:

  
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JANTXV2N2880 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 5A TO-59. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N2880

  • Description:TRANS NPN 80V 5A TO-59
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max):20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 1A, 2V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:TO-210AA, TO-59-4, Stud
  • Supplier Device Package:TO-59
  • Grade:Military
  • Qualification:MIL-PRF-19500/315

Single Bipolar Transistors datasheet and documents for JANTXV2N2880

JANTXV2N2880

Single Bipolar Transistors Overview

The JANTXV2N2880 is a silicon NPN single bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-59-3 stud mount package and supports a maximum DC collector current of 5 A with a collector-emitter voltage (VCEO) of 80 V. The device features a collector-base voltage (VCBO) of 110 V and an emitter-base voltage (VEBO) of 8 V. Power dissipation is rated at 2 W, with a collector-emitter saturation voltage of 1.5 V. Operating temperatures range from -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 15 at 5 A/5 V to a maximum of 120 at 1 A/2 V.

Single Bipolar Transistors Feature Summary

  • High temperature operation capability up to +200°C for demanding environments
  • Stud mount construction for robust mechanical stability and thermal management
  • Silicon NPN technology designed for high reliability applications

Single Bipolar Transistors Applications

  • Military aerospace power switching circuits
  • Radiation-hardened amplifier stages
  • High-reliability industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against official Microchip documentation to ensure compliance with required radiation hardness levels and screening standards. Confirm that the TO-59-3 package dimensions match the target chassis mounting requirements. Request detailed lot traceability data and test reports to validate performance under specified extreme temperature conditions before final integration.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and wide thermal operating ranges are critical. The TO-59-3 package facilitates direct heatsinking for effective thermal dissipation. Ensure the application voltage does not exceed the 80 V collector-emitter rating. Consider the hFE variation across different operating currents during circuit biasing design to maintain stable performance.

Single Bipolar Transistors Part Context

This part belongs to the JANTXV series of radiation-hardened bipolar transistors produced by Microchip Technology. The series is engineered for space and defense electronics requiring long-term reliability. The JANTXV designation indicates enhanced testing and screening compared to standard commercial variants, ensuring consistent electrical parameters in harsh operational environments.

Single Bipolar Transistors Replacement Considerations

Consult official Microchip cross-reference lists for verified equivalents. Generic replacements may lack the necessary radiation hardness or extended temperature specifications required for this application.

JANTXV2N2880JANTXV2N2880
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