K2500GHU

DIACs, SIDACs Overview

The Littelfuse K2500GHU is a high-energy unidirectional SIDAC switch housed in a DO-15 leaded package. It features a breakover voltage range of 240 V to 260 V and a repetitive peak off-state voltage of 220 V. The device supports an on-state RMS current of 1 A and can handle a peak repetitive pulse current of up to 280 A at 5 Hz. It operates within a junction temperature range of -40 °C to 125 °C, with a holding current maximum of 60 mA.

DIACs, SIDACs Feature Summary

• Unidirectional silicon voltage-triggered thyristor switch designed for high energy applications
• Capable of delivering high pulse currents suitable for low repetition rate gas ignition
• Switches on through a negative resistance region to a low on-state voltage

DIACs, SIDACs Applications

• High voltage power supplies
• Natural gas igniters
• Xenon flash ignition systems

DIACs, SIDACs Procurement Notes

Verify the specific part number suffix against official Littelfuse documentation to confirm the exact trigger voltage range and packaging configuration. Ensure that the DO-15 through-hole mounting style aligns with the target PCB design requirements before finalizing procurement orders.

DIACs, SIDACs Selection Notes

Select this component when a unidirectional switching characteristic is required for high-voltage circuits. The K2500GHU is appropriate for designs needing a 240–260 V activation threshold and robust surge handling capabilities exceeding standard bilateral SIDAC specifications.

DIACs, SIDACs Part Context

This device belongs to the K2xx0yHU series of high-energy unidirectional SIDACs manufactured by Littelfuse. The series includes variants with different trigger voltages and packages, such as the DO-214AA surface mount option, providing flexibility for various circuit protection and ignition needs.

DIACs, SIDACs Replacement Considerations

Compatible substitutes include other parts from the K2xx0yHU series, such as the K2400GHU or K2200GHU, provided their lower trigger voltage ranges are acceptable for the application circuit design.