KSA1614YTU

Single Bipolar Transistors Overview

The KSA1614YTU is a PNP epitaxial silicon transistor manufactured by onsemi, housed in a TO-220F package. It supports a collector current of 3 A and a collector-emitter voltage of -55 V. The device dissipates up to 20 W at 25°C case temperature. DC current gain ranges from 40 to 240 depending on the classification code. The maximum junction temperature is 150°C.

Single Bipolar Transistors Feature Summary

• High power handling capability with 20 W dissipation rating
• Suitable for low frequency power amplifier applications
• Capable of use in power regulator circuits

Single Bipolar Transistors Applications

• Low frequency power amplifiers
• Power regulators

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification suffix (R, O, or Y) required for your design, as this determines the minimum and maximum DC current gain range. Confirm that the TO-220F package dimensions match your thermal management and mechanical layout requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high collector current and moderate voltage blocking are needed in a through-hole package. Ensure adequate heat sinking is provided to maintain the case temperature within limits for the specified 20 W power dissipation rating during operation.

Single Bipolar Transistors Part Context

This part belongs to the KSA1614 series of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor. The manufacturer has since been acquired by onsemi, which continues to list the product specifications. The device is designed for general-purpose power switching and amplification tasks.

Single Bipolar Transistors Replacement Considerations

Check datasheets for other PNP transistors in the TO-220F package with similar 3 A current and 55 V voltage ratings. Verify pinout compatibility and ensure the replacement meets the required DC current gain and saturation voltage specifications.