KSC3296YTU

Single Bipolar Transistors Overview

The KSC3296YTU is an NPN epitaxial silicon bipolar junction transistor manufactured by onsemi. It is designed for through-hole mounting in a TO-220F-3 package. The device supports a maximum continuous collector current of 1.5 A and withstands a collector-emitter voltage (VCEO) of 150 V, with a collector-base voltage (VCBO) also rated at 150 V. The emitter-base breakdown voltage (VEBO) is specified at 5 V. Power dissipation capability reaches 20 W under standard conditions. The component operates within a temperature range of -55°C to +150°C. Its DC current gain (hFE) ranges from a minimum of 40 to a maximum of 140, and the transition frequency (fT) is 4 MHz.

Single Bipolar Transistors Feature Summary

• NPN epitaxial silicon construction for reliable switching performance
• High voltage tolerance with 150 V collector-emitter and collector-base ratings
• Robust thermal management via TO-220F-3 through-hole package design

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Audio amplifier output stages
• Industrial control system interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix YTU against official datasheets to confirm package type and compliance status. Confirm end-of-life or obsolescence status directly with onsemi prior to procurement planning. Ensure thermal design accounts for the 20 W dissipation rating and operating temperature limits. Cross-reference pinout configurations to prevent installation errors in existing board layouts.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and moderate current handling are required in through-hole designs. Compare hFE ranges and fT specifications against circuit requirements for amplification or switching speeds. Evaluate thermal resistance characteristics relative to available heatsinking solutions. Consider alternative packages if surface-mount constraints apply.

Single Bipolar Transistors Part Context

This part belongs to the KSC3296 series of NPN transistors produced by onsemi. It serves as a discrete power semiconductor device within the broader portfolio of bipolar junction transistors. The TO-220F-3 packaging distinguishes it from surface-mount variants in the same family. It is categorized under general-purpose power transistors rather than specialized RF or logic devices.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for electrically equivalent NPN transistors with matching VCEO and IC ratings. Verify pin compatibility and thermal performance before replacing. Generic equivalents may differ in hFE spread or switching speed.