KSD363RTU

Single Bipolar Transistors Overview

The KSD363RTU is an NPN epitaxial planar silicon power transistor manufactured by onsemi, designed for high-power switching applications. It utilizes a TO-220-3 through-hole package to facilitate efficient thermal management and robust mechanical mounting. The device features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 6 A. With a power dissipation capacity of 40 W and a maximum operating temperature of +150°C, it supports demanding industrial environments. The component exhibits a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 10 MHz, ensuring reliable amplification and switching performance in linear and saturated modes.

Single Bipolar Transistors Feature Summary

• High power handling capability with 40 W dissipation in a TO-220-3 package
• Robust voltage ratings including 120 V collector-emitter and 300 V collector-base
• High current gain ensuring efficient drive requirements at 6 A collector current
• Extended thermal stability supporting operation up to +150°C junction temperature

Single Bipolar Transistors Applications

• Industrial motor control circuits
• High-current switching regulators
• Power amplifier stages
• Inverter bridge configurations

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'RTU' against official onsemi documentation to confirm tape-and-reel packaging versus tube variants, as this affects handling procedures. Confirm RoHS compliance status directly from the manufacturer's latest datasheet revision. Ensure the component matches the required pinout configuration for your PCB layout. Check for any recent End-of-Life notices or production discontinuation alerts that may impact long-term supply availability.

Single Bipolar Transistors Selection Notes

Select the KSD363RTU when designing circuits requiring high current switching with moderate voltage tolerance. The TO-220-3 package is suitable for applications where heatsinking is feasible. Compare the 120 V VCEO rating against peak transient voltages in the target application. Consider the 10 MHz fT limit for high-frequency switching speeds; if faster transitions are needed, evaluate alternative technologies such as MOSFETs or GaN devices.

Single Bipolar Transistors Part Context

The KSD363 series belongs to onsemi's lineup of general-purpose power transistors. These components are engineered for cost-effective solutions in power electronics. The RTU suffix typically denotes a specific reel quantity or packaging format within the standard KSD363 family. This series complements other bipolar junction transistors used in similar thermal and electrical envelopes.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for KSD363RTU were not identified in available verified sources. Cross-reference with generic equivalents only after verifying exact electrical parameter matching and pin compatibility.