Single Bipolar Transistors KSD569YTU product image

KSD569YTU

$0.29
  • Description:TRANS NPN 80V 7A TO-220-3
  • Series:-

SKU:87e112e68b09 Category: Brand:

  
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KSD569YTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 80V 7A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSD569YTU

  • Description:TRANS NPN 80V 7A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):7:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 500mA, 5A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 3A, 1V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for KSD569YTU

KSD569YTU

Single Bipolar Transistors Overview

The KSD569YTU is an NPN epitaxial silicon power transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features a collector-emitter voltage of 80V and a continuous collector current rating of 7A. The device is housed in a TO-220 package with a maximum collector dissipation of 40W at 25°C case temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 200 depending on the classification code, a collector-emitter saturation voltage of 0.5V maximum at 5A, and a junction temperature limit of 150°C.

Single Bipolar Transistors Feature Summary

  • Designed for low-frequency power amplifier applications
  • Capable of low-speed switching operations
  • Functions as a complement to the KSB707/708 series

Single Bipolar Transistors Applications

  • Low-frequency power amplifiers
  • Low-speed switching circuits
  • Industrial use applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification suffix (R, O, Y, or Z) required for the target circuit's gain requirements. Confirm that the TO-220 mounting configuration aligns with the thermal management design. Ensure the operating conditions remain within the absolute maximum ratings specified in the datasheet to maintain reliability.

Single Bipolar Transistors Selection Notes

Select this component when an NPN power transistor with 80V breakdown and 7A current capability is needed. Consider the hFE classification codes to match the necessary drive current levels. Evaluate the thermal resistance and heat sinking requirements based on the 40W dissipation rating at the case temperature.

Single Bipolar Transistors Part Context

This part belongs to the KSD568/569 family of NPN epitaxial silicon transistors originally produced by Fairchild Semiconductor. The KSD569 variant specifically provides an 80V collector-emitter voltage rating, distinguishing it from the 60V KSD568 model. Both share identical physical packaging and general electrical performance profiles.

Single Bipolar Transistors Replacement Considerations

The KSD568 serves as a lower voltage alternative within the same family. Designers should verify pinout compatibility and thermal characteristics when substituting with other NPN power transistors offering similar voltage and current ratings.

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