Single Bipolar Transistors KSE2955T product image

KSE2955T

  • Description:TRANS PNP 60V 10A TO-220-3
  • Series:-

SKU:62c705dadd78 Category: Brand:

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KSE2955T is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 60V 10A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSE2955T

  • Description:TRANS PNP 60V 10A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
  • Current - Collector Cutoff (Max):700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
  • Power - Max:600 mW
  • Frequency - Transition:2MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for KSE2955T

KSE2955T

Single Bipolar Transistors Overview

The KSE2955T is a PNP silicon transistor manufactured by Fairchild Semiconductor, designed for general-purpose and switching applications. It features a collector-emitter voltage of -60 V and a continuous collector current of -10 A. The device supports a maximum power dissipation of 75 W at case temperature (TC=25°C) and operates within a junction temperature range of -55 °C to +150 °C. It utilizes a TO-220 package with three leads.

Single Bipolar Transistors Feature Summary

  • High DC current gain specified up to IC = 10 A
  • High current gain bandwidth product of 2 MHz minimum
  • Suitable for general-purpose and switching applications

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Power linear applications
  • Audio amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor. Confirm that the specific ordering suffix 'T' corresponds to the tape-and-reel packaging format. Ensure compliance with RoHS directives if required for the target assembly process. Cross-reference datasheet revisions to confirm electrical characteristics match the production batch requirements.

Single Bipolar Transistors Selection Notes

Select the KSE2955T when high current handling capability near 10 A is required in a PNP configuration. Consider the TO-220 package for through-hole mounting where thermal management via a heatsink is feasible. Evaluate the saturation voltage and current gain specifications against load requirements to ensure efficient switching performance in the intended circuit topology.

Single Bipolar Transistors Part Context

This component belongs to the family of PNP silicon power transistors used in discrete semiconductor products. It serves as a complementary counterpart to NPN variants like the KSE2855T. The device is part of the legacy portfolio previously managed by Fairchild Semiconductor, now often associated with onsemi following corporate acquisitions.

Single Bipolar Transistors Replacement Considerations

  • KSH2955TM
  • MJD2955T4G
  • MJF2955G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is -60 V.

What is the DC current gain at 10 A collector current?

The minimum DC current gain (hFE) at IC = -10 A and VCE = -4 V is 5.

What is the maximum power dissipation at ambient temperature?

The maximum power dissipation at Ta = 25°C is 0.6 W without a heatsink.

KSE2955TKSE2955T

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