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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SO
- Series:-
- Mfr:STMicroelectronics
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:14.6V ~ 16.6V
- Logic Voltage - VIL, VIH:1.5V, 3.6V
- Current - Peak Output (Source, Sink):400mA, 650mA
- Input Type:Inverting
- Rise / Fall Time (Typ):50ns, 30ns
- Operating Temperature:-45°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The L6384ED013TR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It drives power MOSFETs or IGBTs with a floating high-side section supporting voltage rails up to 600 V. The device features a single input configuration that prevents simultaneous high-side and low-side activation, ensuring safe operation. Key electrical parameters include a maximum supply voltage of 16.6 V, output currents of 650 mA sink and 400 mA source, and switching times of 50 ns rise and 30 ns fall with a 1 nF load. It operates within a temperature range of -45 °C to +125 °C.
Feature Summary
- Integrated bootstrap diode for compact high-side drive solutions
- Adjustable deadtime function via external resistor to prevent cross-conduction
- CMOS/TTL compatible Schmitt trigger inputs with hysteresis
- Undervoltage lockout protection and VCC supply voltage clamping
Applications
- High-voltage motor control systems
- Industrial inverter circuits
- Power supply topologies requiring isolated half-bridge driving
Procurement Notes
Verify the specific suffix '013TR' corresponds to the SOIC-8 tape and reel packaging format required for automated assembly. Confirm that the component meets RoHS compliance standards as indicated in official documentation. Ensure the ordering quantity aligns with the manufacturer's standard reel size specifications to avoid partial reel handling issues during production.
Selection Notes
Select this component when a single-input half-bridge driver with integrated bootstrap functionality is required. It is suitable for applications needing dV/dt immunity up to ±50 V/nsec. Consider the 600 V floating rail capability for high-voltage isolation requirements. Verify that the external deadtime setting resistor can accommodate the desired switching frequency constraints.
Part Context
This part belongs to the L6384E series of high-voltage gate drivers from STMicroelectronics. The series utilizes BCD technology to integrate high-voltage components with logic controls on a single chip. The L6384ED013TR variant specifically denotes the surface-mount SOIC-8 package version designed for high-volume manufacturing environments.
Replacement Considerations
The L6384ED is the tube-packaged equivalent of this component. Other members of the L6384E family may offer similar electrical characteristics but differ in packaging or minor parameter tolerances.
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