L6387DTR

L6387DTR

$1.73
  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:99477ff7db66 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:17V (Max)
  • Logic Voltage - VIL, VIH:1.5V, 3.6V
  • Current - Peak Output (Source, Sink):400mA, 650mA
  • Input Type:Inverting
  • Rise / Fall Time (Typ):50ns, 30ns
  • Operating Temperature:-45°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6387DTR

Overview

The L6387DTR is a high-voltage half-bridge gate driver manufactured by STMicroelectronics using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section supporting voltage rails up to 600 V. The device features integrated interlocking to prevent simultaneous output activation and includes an internal bootstrap diode. Outputs independently source 400 mA and sink 650 mA, ensuring robust switching performance.

Feature Summary

  • High-voltage rail capability up to 600 V for the floating high-side section
  • Integrated interlocking function prevents simultaneous high-side and low-side conduction
  • Internal bootstrap diode eliminates external component requirements
  • CMOS/TTL compatible Schmitt trigger inputs with hysteresis

Applications

  • Driving half-bridge configurations of power MOSFETs
  • Driving half-bridge configurations of IGBT devices
  • Offline power supply control circuits

Procurement Notes

Verify the specific suffix 'DTR' corresponds to the SO-8 tape and reel packaging variant when sourcing. Confirm that the required operating voltage range aligns with the 600 V maximum rating. Ensure the design accounts for the specified dV/dt immunity characteristics under full temperature conditions. Cross-reference the manufacturer datasheet for exact pinout and thermal specifications.

Selection Notes

Select this component for applications requiring a compact, single-chip solution for driving high-side switches without external bootstrap diodes. The CMOS/TTL input compatibility simplifies interfacing with microcontrollers or DSPs. Consider the 600 V rail limit and the specific current sourcing and sinking capabilities when sizing the power stage components.

Part Context

This part belongs to the L6387 family of high-voltage gate drivers from STMicroelectronics. The family utilizes BCD offline technology to provide robust performance in demanding environments. Variants within the family differ primarily in packaging options, such as DIP or SO formats, while maintaining identical electrical functionality and feature sets.

Replacement Considerations

The L6387ED013TR is a documented alternative within the same product family, offering identical electrical specifications. Verify package compatibility if substituting between different physical form factors.

L6387DTRL6387DTR
$1.73
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