Diode Arrays LFUSCD30120B product image

LFUSCD30120B

  • Description:DIODE ARR SIC 1200V 15A TO-247AD
  • Series:-

SKU:936f3c917a18 Category: Brand:

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LFUSCD30120B is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is DIODE ARR SIC 1200V 15A TO-247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for LFUSCD30120B

  • Description:DIODE ARR SIC 1200V 15A TO-247AD
  • Series:-
  • Mfr:Littelfuse Inc.
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):15A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:375 µA @ 1200 V
  • Operating Temperature - Junction:175°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for LFUSCD30120B

LFUSCD30120B

Diode Arrays Overview

The Littelfuse LFUSCD30120B is a silicon carbide Schottky diode rated for 1200 V and 30 A in a TO-247-3 package. It features a maximum DC forward current of 30 A at 138°C case temperature, with a non-repetitive forward surge current capability of 240 A. The device operates up to a maximum junction temperature of 175°C and offers a typical forward voltage of 1.5 V at 15 A. Thermal resistance from junction to case is specified at 0.4 °C/W.

Diode Arrays Feature Summary

  • Positive temperature coefficient enables safe operation and facilitates easy paralleling.
  • Extremely fast switching behavior that remains independent of temperature variations.
  • Dramatically reduced switching losses compared to conventional silicon bipolar diodes.

Diode Arrays Applications

  • Boost diodes in power factor correction circuits
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'B' corresponds to the TO-247-3 package configuration before procurement. Confirm RoHS compliance status as indicated on the datasheet revision date. Ensure thermal management designs account for the 0.4 °C/W junction-to-case resistance rating under actual operating conditions.

Diode Arrays Selection Notes

Select this component when high-temperature operation up to 175°C is required or when minimizing switching losses is critical. The TO-247-3 package provides enhanced thermal performance suitable for high-power density applications. Consider the positive temperature coefficient for parallel configurations requiring balanced current sharing without additional ballasting.

Diode Arrays Part Context

This device belongs to the LFUSCD series of silicon carbide Schottky diodes manufactured by Littelfuse. The series utilizes SiC substrate technology to achieve low forward voltage drop and negligible reverse recovery charge. These characteristics make the series suitable for demanding power electronics environments where efficiency and reliability are paramount.

Diode Arrays Replacement Considerations

Consult official Littelfuse documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying electrical parameters and package compatibility.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Does the switching speed vary with temperature?

No, the switching behavior is extremely fast and remains independent of temperature.

What is the thermal resistance from junction to case?

The thermal resistance (RθJC) is 0.4 °C/W.

LFUSCD30120BLFUSCD30120B

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