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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 18V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):500mA, 800mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):28ns, 18ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM2101DR is a half-bridge gate driver manufactured by Texas Instruments, designed for driving power MOSFETs and GaN FETs. It operates within a supply voltage range of 9 V to 18 V and delivers peak output currents of 0.5 A for the high-side and 0.8 A for the low-side channels. The device is housed in an SOIC-8 surface-mount package and supports non-inverting logic configurations. It functions reliably across an extended temperature range from -40 °C to +125 °C, ensuring robust performance in demanding industrial and automotive applications.
Feature Summary
- Integrated half-bridge topology with asymmetric drive strength for optimized switching
- Robust thermal operation capability across wide ambient temperature extremes
- Surface-mount packaging suitable for automated PCB assembly processes
Applications
- Industrial motor control systems
- Power factor correction circuits
- DC-DC converter topologies
Procurement Notes
Verify the specific suffix 'DR' corresponds to the SOIC-8 tape-and-reel packaging configuration when sourcing components. Confirm that the operating voltage requirements align with the specified 9 V minimum threshold to ensure proper internal biasing. Validate that the target application environment remains within the stated -40 °C to +125 °C operational limits to maintain device reliability and performance specifications.
Selection Notes
Select this component when a dedicated half-bridge driver is required for medium-power switching applications. Consider the asymmetric current capabilities if distinct high-side and low-side drive strengths are necessary for optimizing switching losses. Ensure the input logic levels are compatible with standard CMOS or TTL interfaces before integration into the control circuitry.
Part Context
This part belongs to the LM2101 series of gate drivers from Texas Instruments. It shares design characteristics with other members like the LM2105DR but differs in specific electrical parameters such as supply voltage ranges and propagation delays. The series focuses on providing efficient control for power switches in compact packages.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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