LMG3426R050RQZT

Overview

The LMG3426R050RQZT is a half-bridge gate driver integrating a 600-V, 50-mΩ GaN FET in a 54-pin VQFN package. It operates with supply voltages between 7.5 V and 18 V. The device features non-inverting input configuration with rise times of 2.5 ns and fall times of 21 ns. It supports switching speeds up to 150 V/ns and includes integrated protection mechanisms such as current fault protection and load discharge. The component functions within an ambient temperature range of -40°C to +125°C.

Feature Summary

• Integrates zero-voltage detection (ZVD) functionality for pulse output during ZVS realization
• Provides precision gate biasing to enhance switching safe operating area
• Includes integrated current fault protection and status flag features

Applications

• High-frequency power conversion systems requiring zero-voltage switching
• GaN-based half-bridge topologies
• Applications demanding high switching speed and integrated protection

Procurement Notes

Verify the specific suffix RQZT against the manufacturer datasheet to confirm package type and moisture sensitivity level. Ensure compatibility with the required operating voltage range and thermal management specifications for the target application environment.

Selection Notes

Select this component when zero-voltage detection is required alongside integrated GaN driving capabilities. Compare against the LMG3425R050RQZT if ZVD features are unnecessary. Confirm that the 54-VQFN package fits the PCB layout constraints and that the 600-V rating meets the circuit voltage requirements.

Part Context

This part belongs to the Texas Instruments LMG342xR050 series of integrated GaN drivers. It differs from the LMG3425 variant by including zero-voltage detection. It complements other devices like the LMG3410 and LMG3411 which offer different integration levels or pin counts.

Replacement Considerations

LMG3425R050RQZT lacks the zero-voltage detection feature found in the LMG3426 variant.