LP0701LG-G

$2.20

Description：MOSFET P-CH 16.5V 700MA 8SOIC
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c272ae12a9fa Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

LP0701LG-G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET P-CH 16.5V 700MA 8SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for LP0701LG-G

Description：MOSFET P-CH 16.5V 700MA 8SOIC
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：16.5 V
Current - Continuous Drain (Id) @ 25°C：700mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：2V, 5V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 300mA, 5V
Vgs(th) (Max) @ Id：1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for LP0701LG-G

LP0701LG-G

Single FETs, MOSFETs Overview

The LP0701LG-G is a P-Channel Enhancement-Mode Lateral MOSFET manufactured by Microchip Technology. It features an 8-lead SOIC package and operates within an ambient temperature range of -55°C to +150°C. The device has a Drain-to-Source Breakdown Voltage (BVDSS) of -16.5 V and a Gate-to-Source Voltage rating of ±10 V. At VGS = -5V and ID = -300 mA, the Static Drain-to-Source On-State Resistance (RDS(ON)) is typically 1.3 Ω with a maximum of 1.5 Ω. The Gate Threshold Voltage (VGS(th)) is typically -0.7 V at ID = -1 mA. Forward Transconductance (GFS) is typically 700 mmho at VGS = -15V and ID = -1A.

Single FETs, MOSFETs Feature Summary

Utilizes a lateral MOS structure with silicon-gate manufacturing for high input impedance and freedom from secondary breakdown.
Features ultra-low threshold voltage characteristics suitable for logic-level interfaces and battery-operated systems.
Provides fast switching speeds with low input capacitance and low leakage currents.

Single FETs, MOSFETs Applications

Logic-Level Interfaces
Solid-State Relays
Battery-Operated Systems
Photovoltaic Drives
Analog Switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'LG' corresponds to the 8-lead SOIC package configuration as defined in the product identification system. Confirm that the 'G' suffix indicates lead-free and RoHS-compliant packaging requirements. Ensure the procurement documentation matches the datasheet revision A specifications for electrical parameters and thermal resistance values.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel Enhancement-Mode Lateral MOSFET with an 8-lead SOIC package is required. Consider the typical RDS(ON) of 1.5 Ω at VGS = -5V for low-power switching applications. Evaluate the -16.5 V BVDSS rating against circuit voltage requirements. Verify compatibility with the specified operating temperature range of -55°C to +150°C.

Single FETs, MOSFETs Part Context

The LP0701LG-G belongs to the LP0701 family of P-Channel Enhancement-Mode Lateral MOSFETs produced by Microchip Technology. This family includes variants such as the LP0701N3-G, which utilizes a 3-lead TO-92 package. The LG suffix specifically designates the surface-mount 8-lead SOIC form factor, distinguishing it from through-hole options while maintaining identical electrical performance characteristics.