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LQA20N200C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Power Integrations. Its product description is DIODE ARRAY GP 200V 10A TO252. Review the specifications below when checking this part for your BOM.
The LQA20N200C is a 200 V, 10 A per diode common-cathode fast recovery rectifier from the Qspeed family. It utilizes TO-252 DPAK surface-mount packaging and features ultra-low reverse recovery charge (QRR) of 48.4 nC at 125 °C. The device supports high dIF/dt switching up to 1000 A/µs with soft recovery characteristics. Electrical specifications include a maximum forward voltage of 1.15 V at 10 A and 25 °C, and a peak repetitive reverse voltage rating of 200 V.
Verify the specific package type matches the design requirements, as the suffix 'N' indicates the TO-252 DPAK variant. Confirm that the thermal management strategy accommodates the specified junction-to-case resistance values during operation. Ensure the application environment remains within the stated operating temperature range of -55 °C to +150 °C to maintain performance reliability.
Select this component when minimizing snubber circuitry is required due to its low QRR and soft recovery profile. It is suitable for designs demanding high switching speeds and reduced EMI filter complexity. Compare against other Qspeed variants if different current ratings or package footprints are necessary for the specific board layout constraints.
This part belongs to the Qspeed family of silicon diodes designed for high-efficiency power conversion. It shares core technology with the LQA20T200C, which offers identical electrical performance but utilizes a TO-220AB through-hole package. Both devices target applications requiring fast switching capabilities and minimal reverse recovery losses.
The LQA20T200C serves as a functional equivalent with identical electrical parameters but differs in physical mounting style. Verify pinout compatibility and thermal dissipation paths when substituting between the DPAK and TO-220AB packages.
The typical QRR at 125 °C is 48.4 nC.
Its soft recovery characteristics and low QRR are designed to eliminate the need for snubber circuits in many applications.
The device can withstand a non-repetitive peak surge current of 350 A per diode for a half-cycle sinusoid at 25 °C case temperature.
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