RF Diode LXS101-23-2/TR product image

LXS101-23-2/TR

$4.94
  • Description:RF DIODE SCHOTTKY 8V 1A SOT23-3
  • Series:LSX

SKU:2557d5d56b0b Category: Brand:

  
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LXS101-23-2/TR is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE SCHOTTKY 8V 1A SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for LXS101-23-2/TR

  • Description:RF DIODE SCHOTTKY 8V 1A SOT23-3
  • Series:LSX
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-55°C ~ 125°C
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for LXS101-23-2/TR

LXS101-23-2/TR

RF Diode Overview

The LXS101-23-2/TR is a silicon Schottky diode manufactured by Microchip Technology, housed in an SOT-23-3 surface-mount package. It features a dual configuration designed for high-frequency applications. Key electrical parameters include a forward current (If) of 1 mA and a maximum reverse current (Ir) of 100 nA. The device exhibits a typical forward voltage (Vf) of 350 mV and supports a power dissipation (Pd) of 250 mW. It operates within a temperature range of -55°C to +125°C.

RF Diode Feature Summary

  • Utilizes silicon Schottky technology for efficient rectification and switching.
  • Dual configuration allows for compact circuit integration.
  • Non-hermetic plastic construction suitable for standard SMT processes.

RF Diode Applications

  • High-frequency switching circuits
  • RF signal rectification
  • Low-power DC-DC converter input stages

RF Diode Procurement Notes

Verify the specific suffix /TR indicates tape-and-reel packaging when ordering. Confirm that the non-hermetic plastic package meets the environmental requirements of the target application. Ensure the 1 mA forward current rating aligns with the system's load requirements to prevent thermal overstress during operation.

RF Diode Selection Notes

Select this component for designs requiring low-capacitance Schottky behavior in a small footprint. Consider the 1 mA current limit when sizing for higher power loads. The wide operating temperature range makes it suitable for industrial environments where extreme cold or heat may affect semiconductor performance.

RF Diode Part Context

This part belongs to Microchip Technology's discrete diode portfolio, specifically focusing on RF and signal processing components. The LXS101 series provides solutions for high-speed applications where low forward voltage drop and fast recovery times are critical. It complements the company's broader range of analog and mixed-signal devices.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official cross-reference guides or contact Microchip Technology directly for verified alternatives that match the SOT-23-3 package and electrical specifications.

LXS101-23-2/TRLXS101-23-2/TR
$4.94
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