M29W640GSB70ZF6E

Memory IC Overview

The M29W640GSB70ZF6E is a 64Mbit NOR flash memory integrated circuit manufactured by Micron Technology Inc. It utilizes a parallel interface and is housed in a 64-TBGA package with dimensions of 10x13 mm. The device operates within a supply voltage range of 2.7V to 3.6V and supports a write cycle time of 70ns per word or page. It is designed for industrial temperature conditions, functioning reliably between -40°C and 85°C ambient temperature.

Memory IC Feature Summary

• Non-volatile storage architecture suitable for firmware retention
• Parallel interface configuration for direct system integration
• Industrial-grade thermal stability for extended operational ranges

Memory IC Applications

• Firmware storage systems
• Boot code retention modules
• Non-volatile data logging applications

Memory IC Procurement Notes

Verify the specific suffix ZF6E against official Micron documentation to confirm package type and temperature grade. Ensure compatibility with existing board layouts for the 64-TBGA footprint. Confirm that the 2.7V-3.6V supply requirements align with the target system design before procurement.

Memory IC Selection Notes

Select this component when a 64Mbit capacity is required with parallel access capabilities. Consider the 64-TBGA package constraints for PCB space. Verify that the operating voltage and temperature range meet the specific environmental and electrical demands of the application.

Memory IC Part Context

This part belongs to the Micron M29W series of NOR flash memories. These devices are engineered for high-reliability embedded applications requiring fast read access and robust data retention. The series supports various package options to accommodate different form factor requirements in industrial and consumer electronics.

Memory IC Replacement Considerations

Consult Micron's official cross-reference guides for verified substitutes. Ensure any replacement maintains the 64Mbit density, parallel interface, and 64-TBGA package specifications. Verify electrical and thermal parameter compatibility before implementation.