Diode Arrays MA3J1470GL product image

MA3J1470GL

  • Description:DIODE ARRAY GP 80V 100MA SMINI3
  • Series:-

SKU:8fc01320cd17 Category: Brand:

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MA3J1470GL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARRAY GP 80V 100MA SMINI3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MA3J1470GL

  • Description:DIODE ARRAY GP 80V 100MA SMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):3 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 75 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:SC-85
  • Supplier Device Package:SMini3-F2
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MA3J1470GL

MA3J1470GL

Diode Arrays Overview

The MA3J1470GL is a silicon epitaxial planar switching diode manufactured by Panasonic Electronic Components. It contains two isolated elements connected in series within an EIAJ SC-79 SMini3-F1 package. The device supports a maximum reverse voltage of 80 V and a single forward current of 100 mA. Key electrical characteristics include a forward voltage of 1.2 V at 100 mA, a reverse current of 100 nA at 75 V, and a terminal capacitance of 2 pF. It features a fast reverse recovery time of 3 ns and operates at junction temperatures up to 150°C.

Diode Arrays Feature Summary

  • Contains two isolated diodes connected in series within a single package for high-density mounting
  • Designed specifically for high-speed switching circuits
  • Utilizes silicon epitaxial planar technology

Diode Arrays Applications

  • High-speed switching circuits
  • General electronic equipment
  • Communications equipment
  • Measuring instruments

Diode Arrays Procurement Notes

Verify the component status as maintenance or discontinued through official Panasonic channels before design finalization. Confirm that the latest Product Standards match specific application requirements. Ensure compliance with RoHS directives and observe all absolute maximum ratings during transient states such as power-on and mode-switching to prevent defects.

Diode Arrays Selection Notes

Select this component when space constraints require multiple diodes in one footprint. The series connection configuration is suitable for applications needing dual isolation or voltage division. Verify that the 100 mA forward current rating meets circuit demands. Consider the 3 ns reverse recovery time for high-frequency signal processing needs.

Diode Arrays Part Context

This part belongs to the MA3J147 series of silicon epitaxial planar switching diodes. It is designed for general-purpose electronics where compact size and speed are priorities. The SMini3-F1 package allows for efficient surface-mount assembly. It serves as a standard solution for basic rectification and switching tasks in consumer and industrial devices.

Diode Arrays Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference specifications such as reverse voltage, forward current, and package dimensions to ensure compatibility. Verify that any alternative component meets the same thermal and electrical performance standards required by the original design.

Diode Arrays FAQ

What is the internal connection configuration of the MA3J147?

The device contains two isolated diodes connected in series within a single package.

What is the maximum peak reverse voltage rating?

The maximum peak reverse voltage (VRM) is rated at 80 V.

How does the terminal capacitance vary with reverse voltage?

Terminal capacitance decreases as reverse voltage increases, measured at 2 pF under zero bias conditions at 1 MHz.

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