MA3SE0200L

Diode Arrays Overview

The MA3SE02 is a silicon epitaxial planar Schottky Barrier Diode designed for cellular phone applications. It features a reverse voltage of 20 V and a maximum forward current of 35 mA in single configuration. The device exhibits a low forward voltage of 0.40 V at 1 mA and a terminal capacitance of 1.2 pF at 0 V bias. It operates within a junction temperature range up to 125 °C and utilizes an EIAJ SC-81 SSMini3-F2 package.

Diode Arrays Feature Summary

• Enables high-frequency wave detection suitable for RF circuits
• Provides low forward voltage characteristics for efficiency
• Maintains small terminal capacitance for signal integrity

Diode Arrays Applications

• Cellular phone circuits
• High-frequency wave detection
• RF signal processing

Diode Arrays Procurement Notes

Verify the specific lifecycle status, as this component falls under maintenance or discontinued categories. Confirm the latest specifications directly with Panasonic before finalizing designs, as product standards are subject to change without notice. Ensure compliance with RoHS directives and handle the device with electrostatic discharge precautions during assembly.

Diode Arrays Selection Notes

Select this component for applications requiring low capacitance and low forward voltage in compact SMD packages. The 20 V rating and 35 mA current limit define its operational boundaries. Consider the SC-81 package dimensions for PCB layout constraints. Validate thermal performance against the 125 °C junction temperature limit during operation.

Diode Arrays Part Context

This part belongs to the MA3SE series of Schottky Barrier Diodes manufactured by Panasonic Electronic Components. It is specifically engineered for mobile communication devices, offering a balance of speed and low loss. The series utilizes silicon epitaxial planar technology to achieve consistent electrical performance across operating conditions.

Diode Arrays Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Verify that any replacement matches the 20 V reverse voltage, 35 mA forward current, and SC-81 package footprint. Ensure the alternative device maintains comparable terminal capacitance and forward voltage characteristics for RF compatibility.

Diode Arrays FAQ

What is the maximum peak reverse voltage rating?

The maximum peak reverse voltage (V_RM) is rated at 20 V.

How does the terminal capacitance vary with reverse voltage?

Terminal capacitance decreases as reverse voltage increases, measured at 1.2 pF at 0 V bias and 1 MHz frequency.

What is the internal connection configuration?

The device features a common cathode configuration with two anodes (Anode 1, Anode 2) and two cathodes (Cathode 1, Cathode 2).