MA3Z792E0L

Diode Arrays Overview

The MA3Z792E0L is a silicon epitaxial planar Schottky barrier diode manufactured by Panasonic Industry. It contains two common-cathode diodes in an SMini3-F1 (SC-85) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 30 V and an average forward current of 100 mA per diode. Key electrical characteristics include a low forward voltage of 0.55 V at 100 mA, a reverse leakage current of 15 µA at 30 V, and a terminal capacitance of 20 pF at 1 MHz. The component features a short reverse recovery time of 2 ns and operates within a junction temperature range up to 125°C.

Diode Arrays Feature Summary

• Dual Schottky barrier diodes integrated into a single compact surface-mount package for space-constrained designs.
• Optimized for high-frequency rectification applications due to extremely short reverse recovery time.
• Provides low forward voltage drop to ensure efficient rectification with minimal power loss.
• Designed specifically for small current rectification tasks in general electronic equipment.

Diode Arrays Applications

• High-frequency rectification circuits
• Small current rectification modules
• General-purpose electronic equipment

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation, as it determines the packaging format. Confirm availability status, as this component may be subject to maintenance or discontinuation plans. Ensure compliance with RoHS directives if required for your manufacturing process. Consult the manufacturer's lifecycle page for the most current supply information before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component when designing circuits requiring fast switching speeds and low forward voltage drops for small signal currents. The dual common-cathode configuration allows for efficient use of board space compared to discrete components. Ensure the operating environment stays within the specified thermal limits and that the reverse voltage requirements do not exceed the 30 V rating.

Diode Arrays Part Context

This part belongs to the MA3Z792 series of silicon epitaxial planar Schottky barrier diodes. The 'MA3Z792E' designation indicates a specific marking symbol (M3Z) and internal connection topology distinct from the 'MA3Z792D' variant. These devices are engineered for super high-speed switching performance in standard consumer and industrial electronics.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer directly for recommended alternatives or updated product lines.

Diode Arrays FAQ

What is the internal connection configuration of the MA3Z792E?

The MA3Z792E contains two diodes configured as a common cathode pair within a single package.

How does the MA3Z792E differ from the MA3Z792D?

While electrically similar, they differ in marking symbols (M3Z for E, M3Y for D) and internal pin connections, particularly regarding which pins serve as anodes versus cathodes.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 1 A for a single diode.