MA47418-134

RF Diode Overview

The MA47418-134 is a silicon PIN diode chip designed for switch and attenuator applications. It features an oxide passivated planar construction with hermetic sealing capabilities. The device operates within a temperature range of -55°C to +175°C. Key electrical specifications include a reverse voltage (VR) of 200 VDC, a maximum capacitance (CJ) of 0.15 pF at -10 V, and a series resistance (RS) of 3 Ω at 10 mA forward current. The nominal carrier lifetime (TL) is 1 µs, and the I-region length is 15 mils.

RF Diode Feature Summary

• Hermetically sealed oxide passivated planar chip construction
• Optimized for low distortion in attenuator and switch circuits
• Suitable for broadband high frequency micro-strip hybrid assemblies

RF Diode Applications

• RF switch circuits
• Low distortion attenuator circuits
• Broadband high frequency micro-strip hybrid assemblies

RF Diode Procurement Notes

Verify component authenticity through authorized MACOM distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability requirements prior to procurement. Ensure handling procedures adhere to electrostatic discharge protocols during storage and transport to maintain device integrity.

RF Diode Selection Notes

Select this component when a 200 V reverse voltage rating and 0.15 pF capacitance are required. The 3 Ω series resistance at 10 mA bias makes it suitable for moderate power control applications. Verify thermal management needs against the specified junction temperature limits and mounting surface flatness requirements.

RF Diode Part Context

This part belongs to the Silicon PIN/NIP Diode Chips family from MACOM Technology Solutions. It utilizes time-proven hard glass Cermachip process technology for encapsulation. The product line covers broad spectrum performance requirements for control circuit applications with various I-region lengths.

RF Diode Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Cross-referencing requires matching reverse voltage, capacitance, and series resistance parameters. Ensure physical dimensions and metallization schemes are compatible with existing assembly processes.