MA4L021-1056

RF Diode Overview

The MA4L021-1056 is a silicon PIN limiter diode from the MA4L series, designed for high signal applications. It features gold doping to achieve lower carrier recovery time. The device is housed in the ODS-1056 ceramic surface mount package with wrap-around contacts. Key electrical parameters include a breakdown voltage of 20V minimum and 35V maximum, a junction capacitance of 0.11 pF typical at -10V reverse bias (1 MHz), and a series resistance of 0.20 ohms maximum at 500 MHz with 10 mA forward current. The I-region thickness is 2 micrometers (1.2 mils).

RF Diode Feature Summary

• Gold-doped silicon construction provides fast signal response and low recovery times.
• Small medium I-region length optimized for high signal handling capabilities.
• Silicon nitride passivation ensures proven reliability and durability.

RF Diode Applications

• Passive limiter control circuits for receiver protection.
• Protection of sensitive components such as low noise amplifiers (LNAs).
• Guarding detectors and mixers within the 10 MHz to 18 GHz frequency range.

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the package style. Ensure that the component meets all required environmental compliance standards before integration into the final design. Confirm availability through authorized distribution channels.

RF Diode Selection Notes

Select this part when fast recovery time is critical due to its gold-doped structure. Compare it against non-gold doped variants if flat leakage power is the primary constraint rather than speed. Verify that the ODS-1056 package dimensions fit the intended PCB layout constraints.

RF Diode Part Context

This component belongs to the MACOM MA4L, MADL, and MADP series of silicon PIN limiter diodes. The series offers various I-region lengths and doping options to balance performance metrics like insertion loss, limiting power, and recovery speed across different packaging styles.

RF Diode Replacement Considerations

MA4L021-134: Chip version of the same base die.

RF Diode FAQ

What is the effect of gold doping on the MA4L021-1056?

Gold doping reduces the carrier lifetime, resulting in faster signal response and lower recovery times compared to non-gold doped devices.

How does the MA4L021-1056 protect downstream components?

It acts as a passive limiter in control circuits, clamping high-power signals to protect sensitive receiver elements like LNAs, detectors, and mixers from damage.