MA4L022-30

RF Diode Overview

The MA4L022-30 is a silicon PIN limiter diode from the MA4L series, packaged in a ceramic pill style. It features gold-doped die for optimized carrier lifetime and fast signal recovery. Key electrical parameters include a breakdown voltage of 20 to 35 V, junction capacitance of 0.12 pF at -10 V reverse bias (1 MHz), and maximum series resistance of 0.19 ohms at 500 MHz. The device supports an operating temperature range of -55°C to +125°C and a junction temperature up to +175°C.

RF Diode Feature Summary

• Gold-doped silicon construction provides lower carrier lifetime for faster signal response and recovery times.
• Designed for high peak and average power handling with low insertion loss and noise figure at zero bias.
• Utilizes proven reliable silicon nitride passivation technology.

RF Diode Applications

• Passive limiter control circuits
• Protection of sensitive receiver components such as low noise amplifiers (LNAs)
• Protection of detectors and mixers

RF Diode Procurement Notes

Verify the specific package suffix required for your application, as the base part number MA4L022 is available in multiple configurations including chip, ceramic pill, and surface mount styles. Confirm RoHS compliance status through official documentation before procurement. Ensure that ordering specifications match the exact case style needed for integration into the circuit design.

RF Diode Selection Notes

Select this component when fast recovery time is critical due to its gold-doped characteristics. Compare it against non-gold doped variants if lower flat leakage power is the primary requirement rather than speed. Consider the thermal resistance and package parasitics associated with the chosen case style during the design phase to ensure optimal performance within the 10 MHz to 18 GHz frequency range.

RF Diode Part Context

This device belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes. These components are engineered for high-signal applications requiring small and medium I-region lengths. The series offers various P1dB compression powers and is available as discrete dies or assembled into diverse surface mount and ceramic packages.

RF Diode Replacement Considerations

MA4L021-30: Similar gold-doped variant with slightly different capacitance and resistance values.

RF Diode FAQ

What is the difference between gold-doped and non-gold-doped versions in this series?

Gold-doped devices, like the MA4L022, offer lower carrier lifetime resulting in faster recovery times. Non-gold doped devices are designed specifically for lower flat leakage power.

How is the junction capacitance measured for this component?

Junction capacitance is measured at 1 MHz with a -10 V reverse voltage. The CJ@10V value represents the microwave capacitance at frequencies greater than 50 MHz at 0 V.