MA4P506-255

RF Diode Overview

The MA4P506-255 is a silicon PIN diode manufactured by MACOM Technology Solutions, designed for high-frequency RF applications. It is housed in an ODS-255 surface-mount package and operates within a frequency range of 1 MHz to 500 MHz. Key electrical specifications include a maximum reverse voltage of 500 V, a peak forward current of 3 A, and a maximum power dissipation of 10 W. The device features a low maximum capacitance of 0.35 pF and a typical carrier lifetime of 2 µs. It supports a junction temperature range from -65°C to +175°C, ensuring reliability in demanding environments.

RF Diode Feature Summary

• High breakdown voltage capability suitable for robust RF switching
• Low capacitance design for minimal signal distortion at high frequencies
• Wide operating temperature range for environmental stability

RF Diode Applications

• RF switching circuits
• Attenuator modules
• Phase shifters

RF Diode Procurement Notes

Verify the specific suffix against official MACOM documentation to confirm pinout and performance variations. Ensure compatibility with the ODS-255 footprint during PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated products.

RF Diode Selection Notes

Select this component when a 500V rating and SMD form factor are required for frequencies up to 500 MHz. Compare the 0.35 pF capacitance against circuit requirements to ensure adequate isolation. Verify that the 10W power dissipation meets thermal management constraints for the intended application.

RF Diode Part Context

This part belongs to the MACOM MA4P series of silicon PIN diodes, which are widely used in microwave and RF systems. The MA4P506 variant specifically offers a higher voltage rating compared to lower-voltage counterparts in the same package family, making it suitable for high-power switching applications.

RF Diode Replacement Considerations

Consult MACOM's official substitution guide for verified equivalents. Generic replacements may not match the precise capacitance or carrier lifetime characteristics required for critical RF performance.