Diode Arrays MA4X16000L product image

MA4X16000L

$0.15
  • Description:DIODE ARRAY GP 40V 100MA MINI4
  • Series:-

SKU:d1ab2f414289 Category: Brand:

  
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MA4X16000L is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARRAY GP 40V 100MA MINI4. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MA4X16000L

  • Description:DIODE ARRAY GP 40V 100MA MINI4
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Diode Configuration:2 Independent
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io) (per Diode):100mA
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):3 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 35 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:Mini4-G1
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MA4X16000L

MA4X16000L

Diode Arrays Overview

The MA4X160L is a silicon epitaxial planar switching diode containing two isolated elements in one package. It features centrosymmetrical wiring for flexible taping and short reverse recovery time. Key electrical parameters include a maximum reverse voltage of 40 V, average forward current of 100 mA (single) or 75 mA (series), and peak repetitive forward current of 225 mA (single). The junction temperature rating is 150 °C. Electrical characteristics specify a typical forward voltage of 1.20 V at 100 mA, reverse current of 0.1 µA at 35 V, terminal capacitance of 2.0 pF max, and reverse recovery time of 3 ns.

Diode Arrays Feature Summary

  • Contains two isolated elements within a single package to enable high-density mounting.
  • Centrosymmetrical wiring configuration allows freedom from taping direction constraints.
  • Short reverse recovery time suitable for high-speed switching circuits.

Diode Arrays Applications

  • High-speed switching circuits
  • General electronic equipment
  • Communications equipment

Diode Arrays Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages. Confirm that the component meets requirements for standard applications only; special applications requiring exceptional reliability are not covered by standard warranties. Ensure final design specifications align with the most up-to-date product standards available from Panasonic Industry.

Diode Arrays Selection Notes

Select this component for designs requiring dual isolated diodes in a compact footprint. Consider the 40 V reverse voltage and 100 mA forward current limits when sizing for load conditions. The low terminal capacitance and fast reverse recovery make it appropriate for high-frequency signal paths where minimal parasitic effects are critical.

Diode Arrays Part Context

This part belongs to the MA4X160 series of silicon epitaxial planar diodes manufactured by Panasonic Electronic Components. It utilizes the EAIJ SC-61 Mini4-G1 package. The device is designed for general-purpose use in office equipment, measuring instruments, and household appliances, adhering to RoHS Directive compliance.

Diode Arrays Replacement Considerations

Consult official Panasonic documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical ratings against any potential replacements to ensure functional equivalence in the target circuit design.

Diode Arrays FAQ

What is the maximum reverse recovery time specified for the MA4X160L?

The maximum reverse recovery time is 3 ns, measured under conditions of IF = 10 mA, VR = 6 V, Irr = 0.1 IR, and RL = 100 Ω.

How does the internal connection structure benefit mounting flexibility?

The centrosymmetrical wiring allows the component to be mounted without being constrained by the taping direction, facilitating automated assembly processes.

What is the maximum allowable junction temperature for operation?

The maximum junction temperature (Tj) rating is 150 °C.

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