MAAP-010169-000000

RF Amplifiers Overview

The MAAP-010169-000000 is a two-stage MMIC power amplifier manufactured by MACOM using GaAs technology. It operates within a frequency range of 2 GHz to 6 GHz, providing a gain of 18 dB. The device delivers an output power of 38 dBm at the 1 dB compression point (P1dB) and achieves a Power Added Efficiency (PAE) of 30%. It requires a supply voltage of 10 V and draws a current of 3.5 A. The component supports an operating temperature range from -40°C to +85°C and is available in a bulk package for surface mount installation.

RF Amplifiers Feature Summary

• Two-stage MMIC architecture designed for broadband high-power applications
• Utilizes GaAs technology for robust RF performance
• Capable of functioning as either a driver or final stage amplifier

RF Amplifiers Applications

• Broadband high-power RF systems
• Microwave communication links
• Test and measurement equipment

RF Amplifiers Procurement Notes

Verify the specific ordering suffix against the official MACOM datasheet to ensure correct configuration. Confirm that the required GaAs MMIC specifications align with your system's thermal and electrical constraints. Cross-reference the 10 V supply requirement and 3.5 A current draw with your power management design. Ensure the SMD/SMT mounting style matches your PCB layout capabilities. Validate the -40°C to +85°C operating range against your environmental conditions.

RF Amplifiers Selection Notes

Select this component when a broadband solution covering 2 GHz to 6 GHz is required. The 18 dB gain and 38 dBm output power make it suitable for driving subsequent stages or direct transmission. Consider the 30% PAE for efficiency requirements in power-constrained designs. The GaAs construction offers reliability for demanding microwave environments. Evaluate the thermal dissipation needs associated with the specified current and power levels.

RF Amplifiers Part Context

This part belongs to the MACOM RF Amplifier product line, specifically categorized under Wireless & RF Integrated Circuits. It is classified as a Power Amplifier utilizing GaAs technology. The device is designed for integration into wireless communication systems requiring high linearity and power output across a wide bandwidth.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.