Diode Arrays MBR10100CS2-G1 product image

MBR10100CS2-G1

  • Description:DIODE ARRAY SCHOT 100V 5A TO-263
  • Series:-

SKU:a72d210e64d7 Category: Brand:

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MBR10100CS2-G1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE ARRAY SCHOT 100V 5A TO-263. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR10100CS2-G1

  • Description:DIODE ARRAY SCHOT 100V 5A TO-263
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 100 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR10100CS2-G1

MBR10100CS2-G1

Diode Arrays Overview

The MBR10100CS2-G1 is a high voltage dual Schottky rectifier manufactured by Diodes Incorporated. It features a TO-263-2 package with a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 5 A per diode leg. The device exhibits a maximum instantaneous forward voltage drop of 0.85 V at +25°C and a maximum reverse current of 0.1 mA at +25°C. It supports an operating junction temperature range from -55°C to +150°C.

Diode Arrays Feature Summary

  • Low forward voltage for high efficiency
  • Guard-ring structure for stress protection
  • Lead-free finish and RoHS compliant

Diode Arrays Applications

  • Power supply output rectification
  • Power management circuits
  • Instrumentation systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix G1 confirms compliance with RoHS directives and Halogen/Antimony-free requirements as defined by the manufacturer. Confirm the package type matches the intended PCB layout, specifically the TO-263-2 footprint dimensions provided in the datasheet. Ensure thermal management aligns with the specified junction-to-case thermal resistance values.

Diode Arrays Selection Notes

Select this component for medium voltage applications requiring low switching losses and minimal noise generation. Evaluate the thermal performance based on the junction-to-case resistance of 2.0 °C/W when mounted on a heat sink. Consider the surge current capability of 100 A for transient protection scenarios within the rated voltage limits.

Diode Arrays Part Context

This device belongs to the MBR10100C series of high voltage power Schottky rectifiers. It is designed for use in high-frequency circuits where low stored charge and majority carrier conduction are advantageous. The series includes various package options such as TO-220F-3 and TO-252-2 to accommodate different mounting and thermal requirements.

Diode Arrays Replacement Considerations

MBR10100CT-G1

Diode Arrays FAQ

What is the maximum thermal resistance from junction to case?

The maximum thermal resistance (junction to case) is 2.0 °C/W.

Is the device suitable for high-frequency operation?

Yes, it is intended for high-frequency circuits due to low switching losses and low noise characteristics.

MBR10100CS2-G1MBR10100CS2-G1

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