MBR10100CT-E3/4W

Diode Arrays Overview

The MBR10100CT-E3/4W is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The device features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 5.0 A per diode, totaling 10 A for the device. It operates within a junction temperature range of -65 °C to +150 °C and has a typical thermal resistance of 4.4 °C/W per diode.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for reduced power loss
• Dual common cathode configuration with two independent elements
• High forward surge capability for transient protection
• RoHS-compliant commercial grade material categorization

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Freewheeling diodes in DC/DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube packaging format containing 50 units per tube as documented in the official Vishay datasheet. Confirm that the E3 suffix indicates RoHS compliance and meets JESD 201 class 1A whisker test requirements before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when a dual common cathode topology is required for space-constrained designs. Ensure the application operates within the specified 100 V reverse voltage limit and 5.0 A per diode current rating. Consider the TO-220AB package for through-hole mounting and verify thermal management capabilities against the 4.4 °C/W junction-to-case thermal resistance.

Diode Arrays Part Context

This part belongs to the MBR1090CT-E3 and MBR10100CT-E3 series from Vishay. It is designed as a high-voltage Schottky rectifier offering improved performance over standard silicon rectifiers. The product line emphasizes low forward voltage drop and high switching speed suitable for modern power electronics applications.

Diode Arrays Replacement Considerations

MBR1090CT-E3/4W

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 120 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.

Does the device meet lead-free standards?

Yes, the E3 suffix indicates the device is RoHS-compliant and features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102.

What is the polarity configuration of the pins?

The device is a dual common cathode configuration where Pin 2 serves as the common cathode, and Pins 1 and 3 serve as the anodes for the respective diodes.