MBR120150CTR

Diode Arrays Overview

The GeneSiC MBR120150CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 150 V and an average forward current of 120 A per package. It features a Twin Tower package with a maximum forward voltage of 0.88 V at 60 A and a thermal resistance of 0.80 °C/W per leg. The device supports an operating temperature range from -55 °C to +150 °C, with a peak forward surge current capability of 800 A.

Diode Arrays Feature Summary

• High surge current capability
• Twin Tower package design
• Not ESD sensitive

Diode Arrays Applications

• Power electronics rectification
• Free wheeling diode applications
• Efficiency-focused power conversion systems

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the procurement source provides valid manufacturer traceability and confirms compliance with relevant environmental standards before finalizing acquisition.

Diode Arrays Selection Notes

Select this component for high-current applications requiring low forward voltage drop and robust thermal performance. Consider the Twin Tower package for efficient mounting and verify that the 150 V rating aligns with the system's peak reverse voltage requirements.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings up to 200 V, all sharing similar current handling capabilities and package styles designed for demanding power applications.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include the MBR120200CT and MBR120200CTR, which offer higher voltage ratings while maintaining identical current and package specifications.