MBR120200CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR120200CT is a silicon power Schottky diode module featuring a Twin Tower package. It offers a repetitive peak reverse voltage of 200 V and an average forward current rating of 120 A per package. The device exhibits a maximum forward voltage of 0.92 V at 60 A and 25 °C, with a thermal resistance of 0.80 °C/W per leg. It supports an operating temperature range from -55 °C to +150 °C and provides a peak forward surge current capability of 800 A.

Diode Arrays Feature Summary

• High surge current capability for robust performance under transient conditions
• Electrically isolated base plate within the Twin Tower package design
• Not sensitive to electrostatic discharge (ESD)
• Guard ring protection for enhanced ruggedness

Diode Arrays Applications

• Switching power supplies
• DC-DC converters
• Free-wheeling rectification circuits
• Reverse battery protection systems

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the procurement source provides valid traceability to the manufacturer's wafer lot. Confirm RoHS compliance status through the supplier's declaration before finalizing orders.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency operation and low forward voltage drop. Consider the 0.80 °C/W thermal resistance for heatsink sizing calculations. Verify that the system's peak reverse voltage requirements do not exceed the 200 V rating under all operating conditions.

Diode Arrays Part Context

This device belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series utilizes a Twin Tower package structure designed for efficient thermal management and high current density in compact form factors suitable for industrial power electronics.

Diode Arrays Replacement Considerations

MBR120150CT

Diode Arrays FAQ

What is the maximum junction temperature for the MBR120200CT?

The maximum operating junction temperature is +150 °C.

Is the MBR120200CT sensitive to electrostatic discharge?

No, the device is explicitly documented as not being ESD sensitive.

What is the peak forward surge current rating?

The peak forward surge current is rated at 800 A for an 8.3 ms half-sine wave pulse.