Diode Arrays MBR12030CT product image

MBR12030CT

$48.80
  • Description:DIODE MOD SCHOTT 30V 120A 2TOWER
  • Series:-

SKU:c105c8291c36 Category: Brand:

  
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MBR12030CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12030CT

  • Description:DIODE MOD SCHOTT 30V 120A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):120A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 60 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR12030CT

MBR12030CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR12030CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 30 V and an average forward current rating of 120 A per package. The device exhibits a maximum forward voltage of 0.70 V at Tj = 100 °C and supports a peak forward surge current of 800 A. Thermal resistance from junction to case is 0.80 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability for robust transient handling
  • Electrically isolated base plate design
  • Not ESD sensitive

Diode Arrays Applications

  • Power rectification in industrial equipment
  • Free-wheeling applications in DC-DC converters
  • Efficiency optimization in high-current power supplies

Diode Arrays Procurement Notes

Verify the specific datasheet version and manufacturer documentation before procurement, as component specifications may vary between suppliers. Confirm that the Twin Tower package dimensions and terminal configurations match your mechanical constraints. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component when a 30 V blocking voltage and 120 A continuous current are required in a compact form factor. The low forward voltage drop contributes to reduced conduction losses compared to standard rectifiers. Consider the 0.80 °C/W thermal resistance for heat sink sizing calculations to maintain safe junction temperatures during operation.

Diode Arrays Part Context

This part belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 20 V to 40 V reverse voltage ratings, all sharing the same 120 A current capacity and Twin Tower packaging style for standardized integration into power electronics designs.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include the MBR12020CT (20 V) and MBR12035CT (35 V), provided voltage ratings suit the circuit requirements. Verify pinout compatibility and thermal characteristics when replacing units to ensure system performance remains unaffected.

MBR12030CTMBR12030CT
$48.80
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