Diode Arrays MBR12035CT product image

MBR12035CT

$48.80
  • Description:DIODE MOD SCHOTT 35V 120A 2TOWER
  • Series:-

SKU:021201f5d4bf Category: Brand:

  
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MBR12035CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12035CT

  • Description:DIODE MOD SCHOTT 35V 120A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):120A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 120 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR12035CT

MBR12035CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR12035CT is a silicon power Schottky rectifier module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 120 A per package. It features a twin tower package design with electrically isolated base plates, providing a thermal resistance of 0.80 °C/W junction-to-case per leg. The device supports a maximum forward surge current of 800 A and operates within a temperature range of -55 °C to 150 °C.

Diode Arrays Feature Summary

  • High surge capability designed for robust power applications
  • Twin tower package configuration with electrically isolated base plates
  • Not ESD sensitive during handling and installation

Diode Arrays Applications

  • Power supply circuits requiring high efficiency rectification
  • DC-DC converter modules in industrial equipment
  • Freewheeling diodes in motor drive systems

Diode Arrays Procurement Notes

Verify the specific part number suffix against official datasheets to confirm terminal configurations, as variations may exist between standard and reversed lead options. Ensure compatibility with mounting hardware requirements for the twin tower package style before procurement.

Diode Arrays Selection Notes

Select this component for applications demanding low forward voltage drop and high thermal stability. The 35 V rating suits low-voltage high-current systems. Evaluate thermal management solutions based on the 0.80 °C/W junction-to-case resistance to maintain safe operating temperatures under load.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 20 V to 100 V reverse voltage ratings, all sharing the same 120 A current capacity and twin tower packaging architecture for standardized integration.

Diode Arrays Replacement Considerations

Cross-reference with MBR12030CTR or MBR12040CTR for similar electrical characteristics. Verify that substitute parts match the 120 A current rating and twin tower package dimensions to ensure mechanical fit and thermal performance equivalence.

MBR12035CTMBR12035CT
$48.80
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