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MBR12035CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 120A 2TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBR12035CT is a silicon power Schottky rectifier module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 120 A per package. It features a twin tower package design with electrically isolated base plates, providing a thermal resistance of 0.80 °C/W junction-to-case per leg. The device supports a maximum forward surge current of 800 A and operates within a temperature range of -55 °C to 150 °C.
Verify the specific part number suffix against official datasheets to confirm terminal configurations, as variations may exist between standard and reversed lead options. Ensure compatibility with mounting hardware requirements for the twin tower package style before procurement.
Select this component for applications demanding low forward voltage drop and high thermal stability. The 35 V rating suits low-voltage high-current systems. Evaluate thermal management solutions based on the 0.80 °C/W junction-to-case resistance to maintain safe operating temperatures under load.
This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 20 V to 100 V reverse voltage ratings, all sharing the same 120 A current capacity and twin tower packaging architecture for standardized integration.
Cross-reference with MBR12030CTR or MBR12040CTR for similar electrical characteristics. Verify that substitute parts match the 120 A current rating and twin tower package dimensions to ensure mechanical fit and thermal performance equivalence.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.
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